參數(shù)資料
型號(hào): BTW69-1200
廠商: 意法半導(dǎo)體
英文描述: 50A SCRs
中文描述: 50A條可控硅
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 238K
代理商: BTW69-1200
BTW67 and BTW69 Series
3/5
Fig. 1:
Maximum average power dissipation
versus average on-state current.
Fig. 2:
Average and D.C. on-state current versus
case temperature.
Fig. 3:
Relative variation of thermal impedance
versus pulse duration.
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
Fig. 5:
number of cycles.
Surge peak on-state current versus
Fig.
current
tp < 10ms, and corresponding value of I2t.
6:
Non-repetitive
for
a
surge
peak
on-state
with
sinusoidal
pulse
width
相關(guān)PDF資料
PDF描述
BTW69-600 50A SCRs
BTW68 HIGH SURGE CAPABILITY
BTW681000 HIGH SURGE CAPABILITY
BTW68-1000 HIGH SURGE CAPABILITY
BTW681200 HIGH SURGE CAPABILITY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BTW69-1200N 制造商:STMicroelectronics 功能描述:THYRISTOR TRIAC - Rail/Tube 制造商:STMicroelectronics 功能描述:SCR 1200V 50A NON-INS TOP3
BTW69-1200RG 功能描述:SCR 50 Amp 1200 Volt RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
BTW69200 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SCR
BTW69-200 制造商:STMicroelectronics 功能描述:THYRISTOR 32A 200V TO-218
BTW69-200NSRG 制造商:STMicroelectronics 功能描述:BTW69-200NSRG - Rail/Tube