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參數(shù)資料
| 型號： | BTW68N-600 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH SURGE CAPABILITY |
| 中文描述： | 高浪涌能力 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 80K |
| 代理商： | BTW68N-600 |
Fig.3 :
Maximum average power dissipation versus
average on-state current (BTW 68 N).
Fig.4 :
Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTW 68 N).
Fig.1 :
Maximum average power dissipation versus
average on-state current (BTW 68).
Fig.2 :
Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTW 68).
Package
IT(RMS)
A
30
VDRM/ VRRM
V
200
400
600
800
1000
1200
600
800
1000
1200
Sensitivity Specification
BTW
X
X
X
X
X
X
X
X
X
X
BTW 68
(Insulated)
BTW 68 N
(Uninsulated)
35
BTW 68 (N)
3/5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTW68N800 | HIGH SURGE CAPABILITY |
| BTW68N-800 | HIGH SURGE CAPABILITY |
| BU208D | Strain Relief RoHS Compliant: Yes |
| BU208D | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
| BU325 | HIGH VOLTAGE SWITCH |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTW68N800 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SURGE CAPABILITY |
| BTW68N-800 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SURGE CAPABILITY |
| BTW69 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:50A SCRS |
| BTW69-1000 | 制造商:STMicroelectronics 功能描述:THYRISTOR 32A 1000V TOP-3 |
| BTW69-1000 | 制造商:STMicroelectronics 功能描述:THYRISTOR 32A 1000V TO-218 |
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