參數(shù)資料
型號: BTS712-N1
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: ?5.0 - 34V的。 4x200mΩ極限(可控硅)第4A示波器- 20 - 9?
文件頁數(shù): 4/15頁
文件大小: 193K
代理商: BTS712-N1
BTS 711 L1
Semiconductor Group
4
Electrical Characteristics
Parameter and Conditions,
each of the four channels
at T
j
= 25 °C, V
bb
= 12 V unless otherwise specified
Symbol
Values
typ
Unit
min
max
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT)
I
L
= 1.8 A
each channel, T
j
= 25°C:
T
j
= 150°C:
two parallel channels, T
j
= 25°C:
four parallel channels, T
j
= 25°C:
Nominal load current
two parallel channels active:
four parallel channels active:
Device on PCB
5)
, T
a
=
85°C, T
j
150°C
Output current while GND disconnected or pulled
up; V
bb
=
30 V, V
IN
= 0, see diagram page 9
Turn-on time
Turn-off time
R
L
=
12
,
T
j
=-40...+150°C
Slew rate on
10 to 30% V
OUT
,
R
L
=
12
,
Slew rate off
70 to 40% V
OUT
, R
L
=
12
,
R
ON
--
165
320
83
42
1.9
2.8
4.4
200
400
100
50
m
one channel active:
I
L(NOM)
1.7
2.6
4.1
--
A
I
L(GNDhigh)
--
--
10
mA
to 90% V
OUT
:
to 10% V
OUT
:
t
on
t
off
80
80
200
200
400
400
μ
s
T
j
=-40...+150°C:
dVdt
on
0.1
--
1
V/
μ
s
T
j
=-40...+150°C:
-dVdt
off
0.1
--
1
V/
μ
s
Operating Parameters
Operating voltage
7
)
Undervoltage shutdown
Undervoltage restart
T
j
=-40...+150°C:
T
j
=-40...+150°C:
T
j
=-40...+25°C:
T
j
=+150°C:
V
bb(on)
V
bb(under)
V
bb(u rst)
5.0
3.5
--
--
--
34
5.0
5.0
7.0
7.0
V
V
V
--
Undervoltage restart of charge pump
see diagram page 14
Undervoltage hysteresis
V
bb(under)
= V
bb(u rst)
- V
bb(under)
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection
8
)
I
bb
=
40 mA
T
j
=-40...+150°C:
V
bb(ucp)
--
5.6
V
V
bb(under)
--
0.2
--
V
T
j
=-40...+150°C:
T
j
=-40...+150°C:
T
j
=-40...+150°C:
T
j
=-40...+150°C:
V
bb(over)
V
bb(o rst)
V
bb(over)
V
bb(AZ)
34
33
--
42
--
--
43
--
--
--
V
V
V
V
0.5
47
7)
At supply voltage increase up to V
bb
=
5.6
V typ without charge pump, V
OUT
V
bb
- 2 V
8)
see also V
ON(CL)
in circuit diagram on page 8.
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