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參數(shù)資料
| 型號(hào)： | BTS711L1Q67060-S7000-A2 |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 晶體管貼片MOSFET的普羅費(fèi)LESITUNGS |
| 文件頁(yè)數(shù)： | 8/15頁(yè) |
| 文件大?。?/td> | 193K |
| 代理商： | BTS711L1Q67060-S7000-A2 |
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BTS 711 L1
Semiconductor Group
8
Input circuit (ESD protection),
IN1...4
IN
GND
I
R
ESD-ZD
I
I
ESD zener diodes are not to be used as voltage clamp at
DC conditions. Operation in this mode may result in a drift of
the zener voltage (increase of up to 1 V).
Status output,
ST1/2 or ST3/4
ST
GND
ESD-
ZD
+5V
R
ST(ON)
ESD-Zener diode: 6.1
V typ., max 5.0 mA; R
ST(ON)
< 380
at 1.6 mA, ESD zener diodes are not to be used as voltage
clamp at DC conditions. Operation in this mode may resul
t
in
a drift of
the zener voltage (increase of up to 1 V).
Inductive and overvoltage output clamp,
OUT1...4
+Vbb
OUT
PROFET
VZ
V
ON
Power GND
V
ON
clamped to V
ON(CL)
= 47 V typ.
Overvoltage protection of logic part
GND1/2 or GND3/4
+ Vbb
IN
ST
ST
R
GND
GND
R
Signal GND
Logic
VZ2
IN
RI
VZ1
V
Z1
=
6.1
V typ., V
Z2
=
47
V typ., R
I
=
3.5
k
typ.
,
R
GND
= 150
Reverse battery protection
GND
Logic
ST
R
IN
ST
+ 5V
OUT
L
R
Power GND
GND
R
Signal GND
Power
Inverse
Diode
I
R
Vbb
-
R
GND
= 150
,
R
I
= 3.5 k
typ
,
Temperature protection is not active during inverse current
operation.
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