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參數(shù)資料
| 型號： | BTS555PE3146 |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 單外設(shè)驅(qū)動 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 200K |
| 代理商： | BTS555PE3146 |
Data Sheet BTS550P
Infineon Technologies AG
Page 3
2000-Mar-24
Thermal Characteristics
Parameter and Conditions
Symbol
Values
typ
Unit
min
max
0.35
Thermal resistance
chip - case
:
R
thJC7
)
R
thJA
--
--
--
K/W
Junction - ambient (free air):
30
--
Electrical Characteristics
Parameter and Conditions
at
T
j
=
-40 ... +150
°C,
V
bb
=
12
V unless otherwise specified
Symbol
Values
typ
Unit
min
max
Load Switching Capabilities and Characteristics
On-state resistance
(Tab to pins 1,5, see measurement
circuit page 8)
V
IN
=
0,
I
L
=
20
A
,
T
j
=
150
°C:
I
L
=
20
A,
T
j
=
25
°C:
R
ON
--
2.8
5.0
3.6
6.5
6.5
10
m
I
L
=
120
A
,
T
j
=
150
°C:
--
7
V
bb
=
6V
8
)
,
I
L
=
20
A
,
T
j
=
150
°C:
R
ON(Static)
I
L(ISO)
--
Nominal load current
9
)
(Tab to pins 1,5)
ISO 10483-1/6.7:
V
ON
=
0.5
V,
T
c =
85
°C
10
)
Maximum load current in resistive range
(Tab to pins 1,5)
see diagram on page 12
Turn-on time
11
)
Turn-off time
R
L
=
1
,
T
j
=-40...+150°C
Slew rate on
11)
(10 to 30%
V
OUT
)
R
L
=
1
,
T
j
=25°C
Slew rate off
11)
(70 to 40%
V
OUT
)
R
L
=
1
=
,
T
j
=25°C
90
115
--
A
V
ON
=
1.8
V,
T
c =
25
°C:
V
ON
=
1.8
V,
T
c =
150
°C:
IIN
to 90%
V
OUT
:
IIN
to 10%
V
OUT
:
I
L(Max)
390
215
120
40
--
--
--
--
A
t
on
t
off
250
90
600
150
μ
s
d
V
/dt
on
0.2
0.5
0.8
V/
μ
s
-d
V
/dt
off
0.2
0.6
1
V/
μ
s
7)
Thermal resistance R
thCH
case to heatsink (about 0.25 K/W with silicone paste) not included!
8
)
Decrease of V
bb
below 10 V causes a slowly a dynamic increase of R
ON
to a higher value of R
ON(Static)
. As
long as V
bIN
> V
bIN(u) max
, R
ON
increase is less than 10 % per second for T
J
< 85 °C.
9)
Not tested, specified by design.
10)
T
J
is about 105°C under these conditions.
11
)See timing diagram on page 13.
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