
BTS 410 D2
Semiconductor Group
9
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection with 150
in GND connection, protection against loss of
ground
Type
BTS 412 B2 410D2 410E2 410F2 410G2 410H2
307
308
Logic version
B
D
EF
G
H
Overtemperature protection with hysteresis
Tj >150 °C, latch function17)18)
Tj >150 °C, with auto-restart on cooling
X
X
X
Short circuit to GND protection
switches off when
VON>3.5 V typ. and Vbb> 7 V
typ17) (when first turned on after approx. 150
s)
XX
switches off when
VON>8.5 V typ.17)
(when first turned on after approx. 150
s)
Achieved through overtemperature protection
X
X
XX
X
Open load detection
in OFF-state with sensing current 30
A typ.
in ON-state with sensing voltage drop across
power transistor
X
X
XXX
Undervoltage shutdown with auto restart
X
X
XXX
Overvoltage shutdown with auto restart19)
X
X
XXX
X
-
X
Status feedback for
overtemperature
short circuit to GND
short to Vbb
open load
undervoltage
overvoltage
X
X
-20)
X
X
-20)
X
-
X
-20)
X
-
X
-
-20)
X
-
X
-
X
-
X
-
Status output type
CMOS
Open drain
X
X
XXX
Output negative voltage transient limit
(fast inductive load switch off)
to
Vbb - VON(CL)
X
X
XXX
Load current limit
high level (can handle loads with high inrush currents)
low level (better protection of application)
X
X
X
XX
XXX
Protection against loss of GND
X
X
XXX
17
) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V
OUT ≠
0 V only if forced externally). So the device remains latched unless
Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
18) With latch function. Reseted by a) Input low, b) Undervoltage
19
) No auto restart after overvoltage in case of short circuit
20
) Low resistance short V
bb to output may be detected in ON-state by the no-load-detection