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參數(shù)資料
| 型號(hào)： | BTS117E3045A |
| 元件分類(lèi)： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 單外設(shè)驅(qū)動(dòng) |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 442K |
| 代理商： | BTS117E3045A |
TEMPFET
BTS 115 A
2
04.97
Electrical Characteristics
at
T
j
= 25
°
C, unless otherwise specified.
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
= 0
, I
D
= 0.25 mA
Gate threshold voltage
V
GS
=
V
DS
, I
D
= 1.0 mA
Zero gate voltage drain current
V
GS
= 0 V,
V
DS
= 50 V
V
(BR)DSS
50
–
–
V
V
GS(th)
1.5
2.0
2.5
T
j
= 25
°
C
T
j
= 125
°
C
I
DSS
–
–
0.1
10
1.0
100
μ
A
V
GS
= 20 V,
V
DS
= 0
T
j
= 25
°
C
T
j
= 150
°
C
I
GSS
–
–
10
2
100
4
nA
μ
A
Drain-source on-state resistance
V
GS
= 4.5 V
, I
D
= 7.8 A
R
DS(on)
–
0.09
0.12
Dynamic Characteristics
Forward transconductance
V
DS
≥
2
×
I
D
×
R
DS(on)max
,
I
D
=7.8 A
Input capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
Turn-on time
t
on
, (
t
on
=
t
d(on)
+
t
r
)
V
CC
= 30 V,
V
GS
= 5 V,
I
D
= 3 A,
R
GS
= 50
g
fs
5.5
9.5
–
S
C
iss
–
550
735
pF
C
oss
–
220
320
C
rss
–
85
150
t
d(on)
t
r
t
d(off)
t
f
–
15
25
ns
–
70
100
Turn-off time
t
off
, (
t
off
=
t
d(off)
+
t
f
)
V
CC
= 30 V,
V
GS
= 10 V,
I
D
= 3 A,
R
GS
= 50
–
70
90
–
50
70
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