參數(shù)資料
型號: BTB40-800BRG
廠商: 意法半導(dǎo)體
英文描述: 40A TRIACs
中文描述: 40A條雙向可控硅
文件頁數(shù): 2/7頁
文件大?。?/td> 93K
代理商: BTB40-800BRG
BTA40, BTA41 and BTB41 Series
2/7
Table 3: Absolute Maximum Ratings
Tables 4: Electrical Characteristics
(T
j
= 25°C, unless otherwise specified)
Symbol
Test Conditions
Table 5: Static Characteristics
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(full sine wave)
RD91 / TOP3
T
c
= 95°C
T
c
= 80°C
t = 20 ms
t = 16.7 ms
40
A
TOP Ins.
I
TSM
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25°C)
F = 50 Hz
F = 60 Hz
t
p
= 10 ms
400
420
A
I
2
t
I
2
t Value for fusing
Critical rate of rise of on-state cur-
rent I
G
= 2 x I
GT
, t
r
100 ns
880
A
2
s
dI/dt
F = 120 Hz
T
j
= 125°C
50
A/μs
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
t
p
= 10 ms
T
j
= 25°C
V
DSM
/V
RSM
+ 100
V
I
GM
P
G(AV)
T
stg
T
j
Peak gate current
t
p
= 20 μs
T
j
= 125°C
T
j
= 125°C
8
A
Average gate power dissipation
1
W
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Quadrant
I - II - III
IV
Value
50
100
Unit
I
GT
(1)
V
D
= 12 V R
L
= 33
MAX.
mA
V
GT
V
GD
I
H
(2)
ALL
MAX.
1.3
V
V
D
= V
DRM
R
L
= 3.3 k
T
j
= 125°C
I
T
= 500 mA
ALL
MIN.
0.2
V
MAX.
80
mA
I
L
I
G
= 1.2 I
GT
I - III - IV
II
T
j
= 125°C
T
j
= 125°C
MAX.
70
160
mA
dV/dt (2)
V
D
= 67 %V
DRM
gate open
MIN.
500
V/μs
(dV/dt)c (2) (dI/dt)c = 20 A/ms
MIN.
10
V/μs
Symbol
V
T
(2)
V
t0
(2)
R
d
(2)
Test Conditions
Value
Unit
I
TM
= 60 A t
p
= 380 μs
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
MAX.
1.55
V
Threshold voltage
MAX.
0.85
V
Dynamic resistance
MAX.
10
m
I
DRM
I
RRM
V
DRM
= V
RRM
MAX.
5
μA
5
mA
Note 1:
minimum I
GT
is guaranted at 5% of I
GT
max.
Note 2:
for both polarities of A2 referenced to A1.
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