參數(shù)資料
型號: BTB24-400B
廠商: 意法半導(dǎo)體
英文描述: STANDARD TRIACS
中文描述: 標(biāo)準(zhǔn)雙向可控硅
文件頁數(shù): 2/4頁
文件大?。?/td> 67K
代理商: BTB24-400B
Symbol
Test Conditions
Quadrant
Suffix
Unit
IGT
VD=12V (DC) RL=33
Tj=25
°
C
I-II-III-IV
I-II-III
IV
I-II-III-IV
I-II-III-IV
I-III-IV
II
MIN
MAX
MAX
MAX
MIN
MAX
5
50
100
1.3
0.2
70
150
50
1.6
5
2
750
mA
VGT
VGD
IL
VD=12V (DC) RL=33
VD=VDRM RL=3.3k
IG=1.2 IGT
Tj=25
°
C
Tj=125
°
C
Tj=25
°
C
V
V
mA
IH *
VTM *
IDRM
IRRM
IT= 500mA gate open
ITM= 35A tp= 380
μ
s
VDRM Rated
VRRM Rated
Tj=25
°
C
Tj=25
°
C
Tj=25
°
C
Tj=125
°
C
Tj=125
°
C
MAX
MAX
MAX
MAX
MIN
mA
V
μ
A
mA
V/
μ
s
dV/dt *
Linear slope up to VD=67%VDRM
gate open
(dI/dt)c = 11.1A/ms
(dV/dt)c *
Tj=125
°
C
MIN
10
V/
μ
s
ELECTRICAL CHARACTERISTICS
* For either polarity of electrode A2 voltage with reference to electrode A1.
PG (AV) = 1W PGM = 10W (tp = 20
μ
s) IGM = 4A (tp = 20
μ
s) VGM = 16V (tp = 20
μ
s).
GATE CHARACTERISTICS
(maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
°
C/W
°
C/W
°
C/W
Rth (j-c) DC Junction to case for DC
1.5
Rth (j-c) AC
Junction to case for 360
°
conduction angle ( F= 50 Hz)
1.1
THERMAL RESISTANCES
0
5
10
15
20
25
0
5
10
15
20
25
30
35
P(W)
IT(rms)(A)
180°
α
α
α
= 180°
α
= 120°
α
= 90°
α
= 30°
α
= 60°
Fig. 1:
Maximum power dissipation versus RMS
on-state current.
0
20
40
60
80
100
120
140
0
5
10
15
20
25
30
35
P(W)
Tcase (°C)
90
125
100
110
120
Tamb(°C)
α
= 180°
Rth=0°C/W
Rth=1°C/W
Rth=2°C/W
Rth=3°C/W
Fig. 2:
Correlation between maximum power dissipation
and maximum allowable temperatures (Tamb and
Tcase) for different thermal resistances heatsink +
contact.
BTB24 B
2/4
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