參數(shù)資料
型號(hào): BTB16-xxxSW
廠商: 意法半導(dǎo)體
英文描述: High Performance Logic Level Triacs(高性能邏輯電平雙向可控硅)
中文描述: 高性能邏輯電平雙向(高性能邏輯電平雙向可控硅)
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 62K
代理商: BTB16-XXXSW
P
G (AV)
= 1W P
GM
= 10W (tp = 20
μ
s) I
GM
= 4A (tp = 20
μ
s).
GATE CHARACTERISTICS
(maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
°
C/W
Rth (j-c) DC Junction to case for DC
BTA
2.8
°
C/W
BTB
1.6
Rth (j-c) AC
Junction to case for AC 360
°
conduction angle
( F= 50 Hz)
BTA
2.1
°
C/W
BTB
1.2
THERMAL RESISTANCES
Symbol
Test Conditions
Quadrant
BTA/BTB16-xxxSW
Unit
Value
I
GT
V
D
=12V (DC) R
L
=33
Tj=25
°
C
I-II-III
MAX
10
mA
V
GT
V
D
=12V (DC) R
L
=33
Tj=25
°
C
I-II-III
MAX
1.3
V
V
GD
V
D
=V
DRM
R
L
=3.3k
Tj=125
°
C
I-II-III
MIN
0.2
V
I
L
I
G
=1.2 I
GT
Tj=25
°
C
I-III
MAX
30
mA
II
MAX
40
I
H
*
I
T
= 100mA gate open
Tj=25
°
C
MAX
15
mA
V
TM
*
I
TM
= 22.5A tp= 380
μ
s
Tj=25
°
C
MAX
1.5
V
I
DRM
I
RRM
V
D
= V
DRM
V
R
= V
RRM
Tj=25
°
C
MAX
5
μ
A
Tj=125
°
C
MAX
2
mA
dV/dt *
V
D
=67%V
DRM
gate open
Tj=125
°
C
MIN
20
V/
μ
s
(dI/dt)c *
(dV/dt)c = 0.1V/
μ
s
Tj=125
°
C
MIN
3.5
A/ms
Without snubber
Tj=125
°
C
MIN
1
* For either polarity of electrode A2 voltage with reference to electrode A1.
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
BTB 16 - 600 S W
TRIAC :
BTB : UNINSULATED
BTA : INSULATED
CURRENT
3 QUADRANTS
VOLTAGE
SENSITIVITY
BTA/BTB16-xxxSW
2/5
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