參數(shù)資料
型號: BTB10BW
廠商: 意法半導體
英文描述: Snubberless Triacs(雙向可控硅)
中文描述: 緩沖器雙向可控硅(雙向可控硅)
文件頁數(shù): 2/5頁
文件大?。?/td> 69K
代理商: BTB10BW
GATECHARACTERISTICS
(maximum values)
PG (AV)= 1W
PGM= 10W (tp = 20
μ
s)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
°
C/W
Rth (j-c) DC Junction to case for DC
BTA
3.3
°
C/W
BTB
2.7
Rth (j-c) AC Junction to case for 360
°
conduction angle
( F= 50 Hz)
BTA
2.5
°
C/W
BTB
2.0
Symbol
Test Conditions
Quadrant
Suffix
Unit
BW
CW
IGT
VD=12V
(DC)
RL=33
Tj=25
°
C
I-II-III
MIN
2
1
mA
MAX
50
35
VGT
VD=12V
(DC)
RL=33
Tj=25
°
C
I-II-III
MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj=125
°
C
I-II-III
MIN
0.2
V
tgt
VD=VDRM
dIG/dt = 3A/
μ
s
IG= 500mA
Tj=25
°
C
I-II-III
TYP
2
μ
s
IL
IG=1.2 IGT
Tj=25
°
C
I-III
TYP
40
-
mA
II
TYP
80
-
I-III
MAX
-
50
II
MAX
-
80
IH*
IT= 500mA gate open
Tj=25
°
C
MAX
50
35
mA
VTM*
ITM= 14A
tp= 380
μ
s
Tj=25
°
C
MAX
1.65
V
IDRM
IRRM
VDRM
VRRM
Rated
Rated
Tj=25
°
C
MAX
0.01
mA
Tj=125
°
C
MAX
2
dV/dt *
Linear slope up to VD=67%VDRM
gate open
Tj=125
°
C
MIN
500
250
V/
μ
s
TYP
750
500
(dI/dt)c *
Without snubber
Tj=125
°
C
MIN
9
5.5
A/ms
TYP
18
11
* For either polarity of electrode A2 voltage with reference to electrode A1.
IGM= 4A (tp = 20
μ
s)
VGM= 16V (tp = 20
μ
s).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA10 BW/CW / BTB10 BW/CW
2/5
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