參數(shù)資料
型號(hào): BTB10-600CW
廠商: 意法半導(dǎo)體
元件分類: 三端雙向可控硅開關(guān)
英文描述: 10A TRIACS
中文描述: 10A條雙向可控硅
文件頁數(shù): 2/6頁
文件大?。?/td> 59K
代理商: BTB10-600CW
BTA/BTB10 Series
2/6
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
I
SNUBBERLESS (3 Quadrants)
Symbol
I
STANDARD (4 Quadrants)
Symbol
STATIC CHARACTERISTICS
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
Quadrant
BTA/BTB10
Unit
CW
BW
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
V
D
= 12 V R
L
= 33
I - II - III
MAX.
35
50
mA
I - II - III
MAX.
1.3
V
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
I - II - III
MIN.
0.2
V
MAX.
35
50
mA
I - III
II
MAX.
50
60
70
80
mA
dV/dt (2)
V
D
= 67 % V
DRM
gate open Tj = 125°C
Without snubber Tj = 125°C
MIN.
500
1000
V/μs
(dI/dt)c (2)
MIN.
5.5
9.0
A/ms
Test Conditions
Quadrant
BTA/BTB10
Unit
C
25
50
B
50
100
I
GT
(1)
V
D
= 12 V R
L
= 33
I - II - III
IV
MAX.
mA
V
GT
V
GD
I
H
(2)
I
L
ALL
MAX.
1.3
V
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
ALL
MIN.
0.2
V
MAX.
25
50
mA
I - III - IV
II
MAX.
40
80
50
100
mA
dV/dt (2)
V
D
= 67 %V
DRM
gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c = 4.4 A/ms Tj = 125°C
MIN.
200
400
V/μs
MIN.
5
10
V/μs
Symbol
Test Conditions
Value
Unit
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 14 A tp = 380 μs
Threshold voltage
Tj = 25°C
MAX.
1.55
V
Tj = 125°C
MAX.
0.85
V
Dynamic resistance
Tj = 125°C
MAX.
40
m
μA
V
DRM
= V
RRM
Tj = 25°C
MAX.
5
Tj = 125°C
1
mA
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BTB10-800B 10A TRIACS
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