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參數(shù)資料
| 型號(hào)： | BTB06-800TWRG |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 元件分類(lèi)： | 三端雙向可控硅開(kāi)關(guān) |
| 英文描述： | 240 x 128 pixel format, LED or EL Backlight |
| 中文描述： | 緩沖器⑩，邏輯電平 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 65K |
| 代理商： | BTB06-800TWRG |
BTA/BTB06 Series
2/6
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
I
SNUBBERLESS and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
I
STANDARD (4 Quadrants)
Symbol
STATIC CHARACTERISTICS
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Quadrant
BTA/BTB06
Unit
TW
SW
CW
BW
I
GT
(1)
V
GT
V
GD
V
D
= 12 V R
L
= 30
I - II - III
MAX.
5
10
35
50
mA
I - II - III
MAX.
1.3
V
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125°C
I
T
= 100 mA
I
G
= 1.2 I
GT
I - II - III
MIN.
0.2
V
I
H
(2)
I
L
MAX.
10
15
35
50
mA
I - III
II
MAX.
10
15
25
30
50
60
70
80
mA
dV/dt (2)
V
D
= 67 %V
DRM
gate open
Tj = 125°C
(dV/dt)c = 0.1 V/μs Tj = 125°C
(dV/dt)c = 10 V/μs Tj = 125°C
Without snubber
Tj = 125°C
MIN.
20
40
400
1000
V/μs
(dI/dt)c (2)
MIN.
2.7
1.2
-
3.5
2.4
-
-
-
-
-
A/ms
3.5
5.3
Test Conditions
Quadrant
BTA/BTB06
Unit
C
25
50
B
50
100
I
G
(1)
V
D
= 12 V R
L
= 30
I - II - III
IV
MAX.
mA
V
GT
V
GD
I
H
(2)
I
L
ALL
MAX.
1.3
V
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
ALL
MIN.
0.2
V
MAX.
25
50
mA
I - III - IV
II
MAX.
40
80
200
50
100
400
mA
dV/dt (2)
V
D
= 67 %V
DRM
gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms
Tj = 125°C
MIN.
V/μs
MIN.
5
10
V/μs
Symbol
Test Conditions
Value
Unit
V
T
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 5.5 A tp = 380 μs
Tj = 25°C
MAX.
1.55
V
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Dynamic resistance
V
DRM
= V
RRM
Tj = 125°C
Tj = 25°C
MAX.
60
5
m
μA
MAX.
Tj = 125°C
1
mA
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