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參數(shù)資料
| 型號： | BTA216BD |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Three quadrant triacs guaranteed commutation |
| 中文描述： | 三象限可控硅整流保證 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 46K |
| 代理商： | BTA216BD |
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA216B series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated
triacs in a plastic envelope suitable for
surface mounting, intended for use in
motor control circuits or with other highly
inductive loads. These devices balance
the
requirements
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low
power
drivers,
controllers.
guaranteed
commutation
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BTA216B-
BTA216B-
BTA216B-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
600D
600E
600F
600
-
800E
800F
800
V
DRM
V
of
commutation
I
T(RMS)
I
TSM
A
A
16
140
16
140
including
micro
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
mb
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-600
600
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
-
V
I
T(RMS)
full sine wave;
T
≤
99 C
full sine wave;
T
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
16
A
I
TSM
Non-repetitive peak
on-state current
-
-
140
150
98
100
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
-
A
2
s
A/
μ
s
I
GM
V
GM
P
GM
P
G(AV)
-
-
-
-
2
5
5
A
V
W
W
over any 20 ms
period
0.5
T
stg
T
j
Storage temperature
Operating junction
temperature
-40
-
150
125
C
C
1
3
mb
2
T1
T2
G
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
μ
s.
February 2000
1
Rev 1.000
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| BTA216B-800F | Three quadrant triacs guaranteed commutation(三象限雙向確保換向可控硅) |
| BTA225-500C | Three quadrant triacs high commutation(三象限雙向高換向可控硅) |
| BTA225-600C | Three quadrant triacs high commutation(三象限雙向高換向可控硅) |
| BTA225-800C | Three quadrant triacs high commutation(三象限雙向高換向可控硅) |
| BTA225_SERIES_B | Transient Voltage Suppressor Diodes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BTA216BSERIESB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs high commutation |
| BTA216BSERIESC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Three quadrant triacs high commutation |
| BTA216BSERIESD.EANDF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Three quadrant triacs guaranteed commutation |
| BTA216BSERIESDEANDF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Three quadrant triacs guaranteed commutation |
| BTA216SERIESB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Three quadrant triacs high commutation |
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