參數(shù)資料
型號(hào): BTA20
英文描述: 20A TRIACS
中文描述: 20A條雙向可控硅
文件頁數(shù): 3/8頁
文件大?。?/td> 69K
代理商: BTA20
December 1998
3
Rev1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
pcb (FR4) mounted; footprint as in Fig.14
MIN.
-
-
-
TYP.
-
-
75
MAX.
3.0
3.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
BTA204S
(or BTA204M)
-
V
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 5 A
V
D
= 12 V; I
T
= 0.1 A
MIN.
TYP.
MAX.
...E
UNIT
...D
...F
I
GT
Gate trigger current
2
-
-
-
-
-
-
5
5
5
10
10
10
25
25
25
mA
mA
mA
I
L
Latching current
-
-
-
-
-
-
-
-
-
-
6
9
6
6
12
18
12
12
1.7
1.5
20
30
20
20
mA
mA
mA
mA
V
V
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
1.4
0.7
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 C
V
D
= V
DRM(max)
; T
j
= 125 C
0.25
0.4
-
V
I
D
Off-state leakage
current
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
BTA204S
(or BTA204M)
-
V
DM
= 67% V
DRM(max)
;
T
waveform; gate open circuit
V
DM
= 400 V; T
j
= 125 C;
I
= 4 A;
dV
/dt = 20V/
μ
s; gate
open circuit
V
DM
= 400 V; T
j
= 125 C;
I
= 4 A;
dV
/dt = 0.1V/
μ
s; gate
open circuit
I
TM
= 12 A; V
D
= V
;
I
G
= 0.1 A; dI
G
/dt = 5 A/
μ
s
MIN.
...E
30
TYP.
MAX.
UNIT
...D
20
...F
50
dV
D
/dt
Critical rate of rise of
off-state voltage
-
-
V/
μ
s
dI
com
/dt
Critical rate of change
of commutating current
1.0
2.0
2.5
-
-
A/ms
dI
com
/dt
Critical rate of change
of commutating current
5.0
-
-
-
-
A/ms
t
gt
Gate controlled turn-on
time
-
-
-
2
-
μ
s
2
Device does not trigger in the T2-, G+ quadrant.
相關(guān)PDF資料
PDF描述
BTA204_SERIES_B_AND_C Three quadrant triacs high commutation
BTA20-400BW TRIAC|400V V(DRM)|20A I(T)RMS|TO-220
BTA20-400CW TRIAC|400V V(DRM)|20A I(T)RMS|TO-220
BTA204M-600B TRIAC|600V V(DRM)|4A I(T)RMS|SOT-428
BTA204M-600C TRIAC|600V V(DRM)|4A I(T)RMS|SOT-428
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BTA2008 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:0.8 A Three-quadrant triacs high commutation
BTA2008-1000D,126 功能描述:BTA2008-1000D/TO-92/STANDARD M 制造商:ween semiconductors 系列:- 包裝:散裝 零件狀態(tài):在售 三端雙向可控硅類型:標(biāo)準(zhǔn) 電壓 - 斷態(tài):1kV 電流 - 通態(tài)(It(RMS))(最大值):800mA 電壓 - 柵極觸發(fā)(Vgt)(最大值):1V 電流 - 不重復(fù)浪涌 50,60Hz(Itsm):9A,9.9A 電流 - 柵極觸發(fā)(Igt)(最大值):5mA 電流 - 保持(Ih)(最大值):10mA 配置:單一 工作溫度:125°C(TJ) 安裝類型:通孔 封裝/外殼:TO-226-3,TO-92-3(TO-226AA)(成形引線) 供應(yīng)商器件封裝:TO-92-3 標(biāo)準(zhǔn)包裝:10,000
BTA2008-1000D/L0EP 功能描述:BTA2008-1000D/L01/TO-92/STANDA 制造商:ween semiconductors 系列:- 包裝:散裝 零件狀態(tài):在售 三端雙向可控硅類型:標(biāo)準(zhǔn) 電壓 - 斷態(tài):1kV 電流 - 通態(tài)(It(RMS))(最大值):800mA 電壓 - 柵極觸發(fā)(Vgt)(最大值):1V 電流 - 不重復(fù)浪涌 50,60Hz(Itsm):9A,9.9A 電流 - 柵極觸發(fā)(Igt)(最大值):5mA 電流 - 保持(Ih)(最大值):10mA 配置:單一 工作溫度:125°C(TJ) 安裝類型:通孔 封裝/外殼:TO-226-3,TO-92-3 標(biāo)準(zhǔn)主體(!--TO-226AA) 供應(yīng)商器件封裝:TO-92-3 標(biāo)準(zhǔn)包裝:2,000
BTA2008-600D 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:0.8 A Three-quadrant triacs high commutation
BTA2008-600D,412 功能描述:雙向可控硅 Thyristor TRIAC 600V 9.9A 3-Pin SPT RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB