參數(shù)資料
型號: BTA204M-800C
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: Three quadrant triacs high commutation(三象限雙向高換向可控硅)
中文描述: 800 V, 4 A, SNUBBERLESS TRIAC, TO-252
文件頁數(shù): 2/6頁
文件大?。?/td> 49K
代理商: BTA204M-800C
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA204S series B and C
BTA204M series B and C
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance
junction to mounting base
R
th j-a
Thermal resistance
junction to ambient
CONDITIONS
full cycle
half cycle
pcb (FR4) mounted; footprint as in Fig.2
MIN.
-
-
-
TYP.
-
-
75
MAX.
3.0
3.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
BTA204
(or BTA204M)
-
V
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 5 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 C
V
D
= V
DRM(max)
; T
j
= 125 C
MIN.
TYP.
MAX.
UNIT
...B
...C
I
GT
Gate trigger current
2
-
-
-
-
-
-
50
50
50
35
35
35
mA
mA
mA
I
L
Latching current
-
-
-
-
-
-
-
-
-
-
30
45
30
30
20
30
20
20
mA
mA
mA
mA
V
V
V
I
H
V
T
V
GT
Holding current
On-state voltage
Gate trigger voltage
1.4
0.7
0.4
1.7
1.5
-
0.25
I
D
Off-state leakage current
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
BTA204S
(or BTA204M)
-
V
= 67% V
; T
= 125 C;
exponential waveform; gate open circuit
V
DM
= 400 V; T
j
= 125 C; I
= 4 A;
dV
/dt = 20V/
μ
s; gate open circuit
I
TM
= 12 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/
μ
s
MIN.
TYP.
UNIT
...B
1000
...C
1000
dV
D
/dt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
-
V/
μ
s
dI
com
/dt
6
3
-
A/ms
t
gt
-
-
2
μ
s
2
Device does not trigger in the T2-, G+ quadrant.
December 1998
2
Rev 1.000
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