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參數(shù)資料
| 型號(hào)： | BTA204M-600B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | Three quadrant triacs high commutation(三象限雙向高換向可控硅) |
| 中文描述： | 600 V, 4 A, SNUBBERLESS TRIAC, TO-252 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | BTA204M-600B |
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA204S series B and C
BTA204M series B and C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated high commutation triacs in
a plastic envelope suitable for surface
mounting intended for use in circuits
where high static and dynamic dV/dt
and high dI/dt can occur. These
devices will commutate the full rated
rms current at the maximum rated
junction temperature withoutthe aid of
a snubber.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
BTA204S
(or BTA204M)
-
BTA204S
(or BTA204M)
-
Repetitive peak
off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
500B
500C
500
600B
600C
600
800B
800C
800
V
DRM
V
I
T(RMS)
I
TSM
4
4
4
A
A
25
25
25
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
Standard Alternative
S
NUMBER
M
1
MT1
gate
2
MT2
MT2
3
gate
MT1
tab
MT2
MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
-
V
I
T(RMS)
full sine wave;
T
≤
107 C
full sine wave;
T
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 6 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
4
A
I
TSM
Non-repetitive peak
on-state current
-
-
-
25
27
3.1
100
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
A
2
s
A/
μ
s
I
GM
V
GM
P
GM
P
G(AV)
-
-
-
-
2
5
5
A
V
W
W
over any 20 ms
period
0.5
T
stg
T
j
Storage temperature
Operating junction
temperature
-40
-
150
125
C
C
1
2
3
tab
T1
T2
G
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
μ
s.
December 1998
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTA204M-800B | Three quadrant triacs high commutation(三象限雙向高換向可控硅) |
| BTA204S-500B | Three quadrant triacs high commutation(三象限雙向高換向可控硅) |
| BTA204M-600C | Three quadrant triacs high commutation(三象限雙向高換向可控硅) |
| BTA204M-800C | Three quadrant triacs high commutation(三象限雙向高換向可控硅) |
| BTA204S-500C | Three quadrant triacs high commutation(三象限雙向高換向可控硅) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTA204M-600C | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRIAC|600V V(DRM)|4A I(T)RMS|SOT-428 |
| BTA204M-600D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRIAC|600V V(DRM)|4A I(T)RMS|SOT-428 |
| BTA204M-600E | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
| BTA204M-600F | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Three quadrant triacs guaranteed commutation |
| BTA204M-800B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRIAC|800V V(DRM)|4A I(T)RMS|SOT-428 |
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