參數(shù)資料
型號: BTA204_SERIES_B_AND_C
英文描述: Three quadrant triacs high commutation
中文描述: 三高減刑象限可控硅
文件頁數(shù): 4/8頁
文件大小: 69K
代理商: BTA204_SERIES_B_AND_C
December 1998
4
Rev1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
Fig.1. Maximum on-state dissipation, P
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
mb
107C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
= 180
120
90
60
30
BT136
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
122
119
116
113
110
107
104
101
1
-50
0
50
100
150
0
1
2
3
4
5
BT136
Tmb / C
IT(RMS) / A
107 C
10us
100us
1ms
T / s
10ms
100ms
10
100
1000
BT136
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T2- G+ quadrant
0
0.1
1
10
2
4
6
8
10
12
BT136
surge duration / s
IT(RMS) / A
1
10
Number of cycles at 50Hz
100
1000
0
5
10
15
20
25
30
BT136
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
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