參數(shù)資料
型號(hào): BTA16-xxxSW
廠商: 意法半導(dǎo)體
英文描述: High Performance Logic Level Triacs(高性能邏輯電平雙向可控硅)
中文描述: 高性能邏輯電平雙向(高性能邏輯電平雙向可控硅)
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 62K
代理商: BTA16-XXXSW
0
2
4
6
8
10
12
14
16
0
5
10
15
20
P(W)
α
= 60°
α
= 90°
α
= 30°
α
= 120°
α
= 180°
I
(A)
T(RMS)
180°
α
α
Fig.1 :
Maximum power dissipation versus RMS on-state
current (resistive load).
0
20
40
60
80
100
120
140
0
5
10
15
20
P(W)
Tcase (°C)
α
=180°
Rth=0 °C/W
Rth=1 °C/W
Rth=2 °C/W
Rth=4 °C/W
85
125
105
115
95
Tamb(°C)
Fig.2-1 :
Correlation between maximum power dissipation
and maximum allowable temperatures (T
amb
and T
case
) for
different thermal resistances (BTA).
0
25
50
75
100
125
0
2
4
6
8
10
12
14
16
18
BTA
BTB
I
(A)
T(RMS)
Tcase(°C)
α
=180°
Fig.3 :
RMS on-state current versus case temperature.
K=[Zth/Rth]
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.10
1.00
Zth(j-c)
Zth(j-a)
tp(s)
Fig.4 :
Relative variation of thermal impedance versus
pulse duration.
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
I
GT H
GT H
I
GT
I
H
Tj(°C)
Fig.5 :
Relative variation of gate trigger current and holding
current versus junction temperature (typical values).
0
20
40
60
80
100
120
140
0
5
10
15
20
Rth=0 °C/W
Rth=1 °C/W
Rth=2 °C/W
Rth=4 °C/W
105
125
115
P(W)
Tcase (°C)
Tamb(°C)
α
=180°
Fig.2-2 :
Correlation between maximum power dissipation
and maximum allowable temperatures (T
amb
and T
case
) for
different thermal resistances heatsink + contact (BTB).
BTA/BTB16-xxxSW
3/5
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