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參數(shù)資料
| 型號(hào)： | BT151X |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Thyristors |
| 中文描述： | 晶閘管 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 71K |
| 代理商： | BT151X |
9397 750 13162
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 9 June 2004
2 of 11
Philips Semiconductors
BT151X series
Thyristors
3.
Ordering information
4.
Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/
μ
s.
Table 2:
Type number
Ordering information
Package
Name
-
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3 lead TO-220 ‘full pack’
Version
SOT186A
BT151X-500
BT151X-650
BT151X-800
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DRM
, V
RRM
repetitive peak off-state voltage
BT151X-500
BT151X-650
BT151X-800
I
T(AV)
average on-state current
Limiting values
Conditions
Min
Max
Unit
[1]
-
-
-
-
500
650
800
7.5
V
V
V
A
[1]
half sinewave;
T
hs
≤
69
°
C;
Figure 1
all conduction angles;
Figure 4
and
Figure 5
half sinewave;
T
j
= 25
°
C prior to
surge;
Figure 2
and
Figure 3
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 20 A; I
G
= 50 mA;
dI
G
/dt 50 mA/
μ
s
I
T(RMS)
RMS on-state current
-
12
A
I
TSM
non-repetitive peak on-state current
-
-
-
-
120
132
72
50
A
A
A
2
s
A/
μ
s
I
2
t
dI
T
/dt
I
2
t for fusing
repetitive rate of rise of on-state
current after triggering
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
-
-
-
-
40
-
2
5
5
0.5
+150
125
A
V
W
W
°
C
°
C
over any 20 ms period
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PDF描述 |
|---|---|
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| BT152BSERIES | Thyristors |
| BT152X | Thyristors |
| BT152XSERIES | Thyristors |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT151X_SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Thyristors |
| BT151X-500 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristors |
| BT151X-500C,127 | 功能描述:SCR RAIL-THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT151X-500R | 功能描述:SCR RAIL SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| BT151X-500R,127 | 功能描述:SCR RAIL SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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