- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369510 > BT138X-800G Connector Adapter; Convert From:BNC Coaxial Plug; Convert To:Dual Banana Plugs PDF資料下載
參數(shù)資料
| 型號： | BT138X-800G |
| 英文描述： | Connector Adapter; Convert From:BNC Coaxial Plug; Convert To:Dual Banana Plugs |
| 中文描述： | 晶閘管產(chǎn)品目錄 |
| 文件頁數(shù)： | 181/224頁 |
| 文件大小： | 2697K |
| 代理商： | BT138X-800G |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁第135頁第136頁第137頁第138頁第139頁第140頁第141頁第142頁第143頁第144頁第145頁第146頁第147頁第148頁第149頁第150頁第151頁第152頁第153頁第154頁第155頁第156頁第157頁第158頁第159頁第160頁第161頁第162頁第163頁第164頁第165頁第166頁第167頁第168頁第169頁第170頁第171頁第172頁第173頁第174頁第175頁第176頁第177頁第178頁第179頁第180頁當前第181頁第182頁第183頁第184頁第185頁第186頁第187頁第188頁第189頁第190頁第191頁第192頁第193頁第194頁第195頁第196頁第197頁第198頁第199頁第200頁第201頁第202頁第203頁第204頁第205頁第206頁第207頁第208頁第209頁第210頁第211頁第212頁第213頁第214頁第215頁第216頁第217頁第218頁第219頁第220頁第221頁第222頁第223頁第224頁
Application Notes
AN1008
2002 Teccor Electronics
Thyristor Product Catalog
AN1008 - 3
http://www.teccor.com
+1 972-580-7777
Figure AN1008.4
Relationship of Maximum Current Rating to Time
I
2
t Rating — SCR and Triac
The I
2
t rating gives an indication of the energy-absorbing capabil-
ity of the thyristor device during surge-overload conditions. The
rating is the product of the square of the RMS current (I
RMS
)
2
that
flows through the device and the time during which the current is
present and is expressed in A
2
s. This rating is given for fuse
selection purposes. It is important that the I
2
t rating of the fuse is
less than that of the thyristor device. Without proper fuse or cur-
rent limit, overload or surge current will permanently damage the
device due to excessive junction heating.
P
G
: Gate Power Dissipation — SCR and Triac
Gate power dissipation ratings define both the peak power (P
GM
)
forward or reverse and the average power (P
G(AV)
) that may be
applied to the gate. Damage to the gate can occur if these ratings
are not observed. The width of the applied gate pulses must be
considered in calculating the voltage and current allowed since
the peak power allowed is a function of time. The peak power
that results from a given signal source relies on the gate charac-
teristics of the specific unit. The average power resulting from
high peak powers must not exceed the average-power rating.
T
S
, T
J
: Temperature Range — SCR and Triac
The maximum storage temperature (T
S
) is greater than the maxi-
mum operating temperature (actually maximum junction temper-
ature). Maximum storage temperature is restricted by material
limits defined not so much by the silicon but by peripheral materi-
als such as solders used on the chip/die and lead attachments as
well as the encapsulating epoxy. The forward and off-state block-
ing capability of the device determines the maximum junction (T
J
)
temperature. Maximum blocking voltage and leakage current rat-
ings are established at elevated temperatures near maximum
junction temperature; therefore, operation in excess of these lim-
its may result in unreliable operation of the thyristor.
Characteristics
V
BO
: Instantaneous Breakover Voltage — SCR and Triac
Breakover voltage is the voltage at which a device turns on
(switches to on state by voltage breakover). (Figure AN1008.1)
This value applies for open-gate or gate-resistance termination.
Positive gate bias lowers the breakover voltage. Breakover is
temperature sensitive and will occur at a higher voltage if the
junction temperature is kept below maximum T
J
value. If SCRs
and triacs are turned on as a result of an excess of breakover
voltage, instantaneous power dissipations may be produced that
can damage the chip or die.
I
DRM
: Peak Repetitive Off-state (Blocking) Current
SCR
I
DRM
is the maximum leakage current permitted through the SCR
when the device is forward biased with rated positive voltage on
the anode (DC or instantaneous) at rated junction temperature
and with the gate open or gate resistance termination. A 1000
resistor connected between gate and cathode is required on all
sensitive SCRs. Leakage current decreases with decreasing
junction temperatures. Effects of the off-state leakage currents
on the load and other circuitry must be considered for each cir-
cuit application. Leakage currents can usually be ignored in
applications that control high power.
Triac
The description of peak off-state (blocking/leakage) current for
the triac is the same as for the SCR except that it applies with
either positive or negative bias on main terminal 2.
(Figure AN1008.2)
I
RRM
: Peak Repetitive Reverse Current — SCR
This characteristic is essentially the same as the peak forward
off-state (blocking/leakage) current except negative voltage
is applied to the anode (reverse biased).
V
TM
: Peak On-State Voltage — SCR and Triac
The instantaneous on-state voltage (forward drop) is the
principal voltage at a specified instantaneous current and
case temperature when the thyristor is in the conducting state.
To prevent heating of the junction, this characteristic is mea-
sured with a short current pulse. The current pulse should be
at least 100 μs duration to ensure the device is in full conduc-
tion. The forward-drop characteristic determines the on-state
dissipation. See Figure AN1008.5, and refer to “IT: Current
Rating” on page AN1008-2.
Figure AN1008.5
On-state Current versus On-state Voltage (Typical)
I
I
TM
di/dt
Time
0
t
t = 8.3 ms for 60 Hz
10 ms for 50 Hz
di
dt
(I
TM
)
t
=
15 and 25 A TO-220
TC = 25 C
40 A TO-218
0
0.6
0.8
Positive or Negative
1.0
1.2
1.4
1.6
1.8
Instantaneous On-state Voltage (v
T
) – Volts
0
10
20
30
40
50
60
70
80
90
P
I
T
)
相關PDF資料 |
PDF描述 |
|---|---|
| BT139-800G | Thyristor Product Catalog |
| BT139F-500G | Thyristor Product Catalog |
| BT139X-500G | Thyristor Product Catalog |
| BT139X-500H | Thyristor Product Catalog |
| BT137B | Triacs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BT138XSERIES | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT138XSERIESE | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs sensitive gate |
| BT138Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:12 A four-quadrant triacs, sensitive gate, insulated |
| BT138Y-600E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:12 A four-quadrant triacs, sensitive gate, insulated |
| BT138Y-600E,127 | 功能描述:雙向可控硅 Thyristor TRIAC 600V 105A 3-Pin (3+Tab) RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
發(fā)布緊急采購，3分鐘左右您將得到回復。