參數(shù)資料
型號: BT138
廠商: 友順科技股份有限公司
英文描述: TRIACS LOGIC LEVEL
中文描述: 雙向可控硅邏輯電平
文件頁數(shù): 2/5頁
文件大小: 190K
代理商: BT138
UTC BT138
TRIAC
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R401-002,A
THERMAL RESISTANCES
PARAMETER
SYMBOL
MIN
TYP
MAX
1.5
2.0
UNIT
Thermal Resistance, Junction to Mounting Base
Full cycle
Half cycle
Thermal Resistance, Junciton to Ambient
In free air
STATIC CHARACTERISTICS
(Tj=25
°
C,unless otherwise specified)
PARAMETER
Gate Trigger Current
T2+G+
T2+G-
T2-G-
T2-G+
Latching Current
T2+G+
T2+G-
T2-G-
T2-G+
Holding Current
On-State Voltage
Gate Trigger Voltage
R
θ
j-mb
°
C /W
R
θ
j-a
60
-
°
C /W
SYMBOL
TEST CONDITIONS
V
D
=12V, I
T
=0.1A
MIN
TYP
5
8
10
12
7
20
8
10
6
1.4
0.7
0.4
0.1
MAX
35
35
35
70
40
60
40
60
30
1.65
1.5
0.5
UNIT
I
GT
mA
I
L
V
D
=12V, I
GT
=0.1A
mA
I
H
V
T
V
D
=12V, I
GT
=0.1A
I
T
=15A
V
D
=12V, I
T
=0.1A
V
D
=400V, I
T
=0.1A, Tj=125
°
C
V
D
=V
DRM(max)
,
Tj=125
°
C
mA
V
V
GT
0.25
V
Off-state Leakage Current
DYNAMIC CHARACTERISTICS
(Tj=25
°
C,unless otherwise specified)
PARAMETER
SYMBOL
Critical Rate Of Rise Of Off-State
Voltage
I
D
mA
TEST CONDITIONS
V
DM
=67% V
DRM(max)
, Tj=125
°
C
Exponential waveform,
Gate open circuit
V
DM
=400V,Tj=95
°
C, I
T(RMS)
=12A
dl
com
/dt =5.4A/ms,
Gate open circuit
I
TM
=16A, V
D
=V
DRM(max)
,
I
G
=0.1A dI
G
/dt=5A/
μ
s
MIN
100
TYP MAX UNIT
250
dV
D
/dt
V/
μ
s
Critical Rate Of Change
Of Commutating Voltage
dV
com
/dt
20
V/
μ
s
Gate Controlled Turn-on Time
tgt
2
μ
s
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