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參數(shù)資料
| 型號： | BT137M |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | 1-of-8 Decoder 20-LCCC -55 to 125 |
| 中文描述： | 雙向可控硅 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 52K |
| 代理商： | BT137M |
Philips Semiconductors
Product specification
Triacs
BT137S series
BT137M series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a plastic
envelope,
suitable
mounting,
intended
applications
requiring
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
applications include motor control,
industrial
and
domestic
heating and static switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
for
for
surface
use
high
in
BT137S
(or BT137M)
-
BT137S
(or BT137M)
-
BT137S
(or BT137M)
-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
500
500F
500G
500
600
600F
600G
600
800
800F
800G
800
V
DRM
V
Typical
I
T(RMS)
I
TSM
8
65
8
65
8
A
A
lighting,
65
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
Standard Alternative
S
NUMBER
M
1
MT1
gate
2
MT2
MT2
3
gate
MT1
tab
MT2
MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
-
V
I
T(RMS)
I
TSM
full sine wave; T
mb
≤
102 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
8
A
-
-
-
65
71
21
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
1
2
3
tab
T1
T2
G
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
μ
s.
October 1997
1
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT137S-500 | DIODE ZENER DUAL ISOLATED 200mW 16.2Vz 5mA-Izt 0.0556 0.1uA-Ir 11.2 SOT-363 3K/REEL |
| BT137S-500D | DIODE ZENER SINGLE 150mW 16Vz 5mA-Izt 0.0556 0.1uA-Ir 11.2 SOT-523 3K/REEL |
| BT137S-500E | DIODE ZENER TRIPLE ISOLATED 200mW 16.2Vz 5mA-Izt 0.0556 0.1uA-Ir 11.2 SOT-363 3K/REEL |
| BT137S-500F | DIODE ZENER SINGLE 200mW 16Vz 5mA-Izt 0.0556 0.1uA-Ir 11.2 SOT-323 3K/REEL |
| BT137S-500G | Triacs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT137M_SERIES_E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs sensitive gate |
| BT137M-500 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT137M-500D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs logic level |
| BT137M-500E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs sensitive gate |
| BT137M-500F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
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