參數(shù)資料
型號(hào)： BT137F-600G
廠商： NXP SEMICONDUCTORS
元件分類： 晶閘管
英文描述： SMD DIODE BAW56 70V
中文描述： 600 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC
封裝： PLASTIC, FULL PACK-3
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 51K
代理商： BT137F-600G
Philips Semiconductors
Product specification
Triacs
BT137F series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a full pack
plastic envelope, intended for use in
applications
requiring
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
applications include motor control,
industrial
and
domestic
heating and static switching.
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
high
BT137F-
BT137F-
BT137F-
500
500F
500G
500
600
600F
600G
600
800
800F
800G
800
Typical
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
V
lighting,
I
T(RMS)
I
TSM
8
55
8
55
8
A
A
55
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
-
V
I
T(RMS)
I
TSM
full sine wave; T
hs
≤
73 C
full sine wave; T
= 125 C prior
to surge; with reapplied V
DRM(max)
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
8
A
-
-
-
55
60
15
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
T1
T2
G
1 2 3
case
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
μ
s.
February 1996
1
Rev 1.100
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