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參數(shù)資料
| 型號： | BT136M-800E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Octal Registered Transceivers with 3-State Outputs 24-SOIC -40 to 85 |
| 中文描述： | 800 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252 |
| 封裝： | PLASTIC, SOT-428, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 49K |
| 代理商： | BT136M-800E |
Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136S series E
BT136M series E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
triacs in a plastic envelope, suitable
forsurfacemounting,intendedforuse
in
general
purpose
switching
and
applications, where high sensitivity is
required in all four quadrants.
passivated,
sensitive
gate
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
BT136S
(or BT136M)
-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
500E
500
600E
600
800E
800
bidirectional
phase
V
DRM
V
control
I
T(RMS)
I
TSM
4
25
4
25
4
A
A
25
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
Standard Alternative
S
NUMBER
M
1
MT1
gate
2
MT2
MT2
3
gate
MT1
tab
MT2
MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-600
600
1
UNIT
-500
500
1
-800
800
V
DRM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
-
V
I
T(RMS)
I
TSM
full sine wave; T
mb
≤
107 C
full sine wave; T
j
= 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 6 A; I
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
-
4
A
-
-
-
25
27
3.1
A
A
I
2
t
dI
T
/dt
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
A
2
s
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
150
125
A/
μ
s
A/
μ
s
A/
μ
s
A/
μ
s
A
V
W
W
C
C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
-40
-
1
2
3
tab
T1
T2
G
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
μ
s.
July 1997
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BT136MSERIESE | Transient Voltage Suppressor Diodes |
| BT136X | Triacs |
| BT136X-500 | DIODE, SMD, SHOTTKY, 20V, 3A, |
| BT136X-500D | RECTIFIER SCHOTTKY SINGLE 3A 20V 100A-Ifsm 0.5Vf 0.5A-IR SMA 5K/REEL |
| BT136X-500E | Triacs sensitive gate |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT136M-800F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT136M-800G | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs |
| BT136MSERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs |
| BT136MSERIESD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Triacs logic level |
| BT136MSERIESE | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Triacs sensitive gate |
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