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參數(shù)資料
| 型號(hào)： | BSX32 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High-Voltage, High-Current Switch(硅平面外延工藝NPN晶體管(用于高電壓,高電流開關(guān))) |
| 中文描述： | 高電壓，大電流開關(guān)（硅平面外延工藝npn型晶體管（用于高電壓，高電流開關(guān)）） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 78K |
| 代理商： | BSX32 |
ELECTRICAL CHARACTERISTICS
(T
amb
= 25
°
C unless otherwise specified)
Symbol
I
CBO
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Collector Cutoff Current
(I
E
= 0)
Collector-base Breakdown
Voltage (I
E
= 0)
Collector-emitter Breakdown
Voltage (I
B
= 0)
Emitter-base Breakdown
Voltage (I
C
= 0)
Collector-emitter Saturation
Voltage
V
CB
= 50 V
I
C
= 100
μ
A
0.25
4
μ
A
V
V
(BR)CBO
65
V
(BR)CEO
*
I
C
= 10 mA
40
V
V
(BR)EBO
I
E
= 100
μ
A
6
V
V
CE(sat)
*
I
C
= 100 mA
I
C
= 500 mA
I
C
= 1A
I
B
= 10 mA
I
B
= 50 mA
I
B
= 100 mA
0.17
0.36
0.6
0.25
0.5
0.85
V
V
V
V
BE(sat)
*
Base-emitter Saturation
Voltage
I
C
= 100 mA
I
C
= 500 mA
I
C
= 1 A
I
C
= 10 mA
I
C
= 100 mA
I
C
= 500 mA
I
C
= 1 A
V
CE
= 1 V
I
B
= 10 mA
I
B
= 50 mA
I
B
= 100 mA
V
CE
= 1 V
V
CE
= 1 V
V
CE
= 1 V
V
CE
= 5 V
T
amb
= – 55
°
C
I
C
= 100 mA
I
C
= 500 mA
V
CE
= 10 V
0.8
0.9
1.5
2
V
V
V
h
FE
*
DC Current Gain
30
60
25
20
30
15
60
90
60
60
45
35
150
f
T
Transition Frequency
I
C
= 50 mA
f = 100 MHz
I
C
= 0
f = 1 MHz
I
E
= 0
f = 1 MHz
I
C
= 500 mA
I
B1
= 50 mA
I
C
= 500 mA
I
B1
= – I
B2
= 50 mA
400
MHz
C
EBO
Emitter-base Capacitance
V
EB
= 0.5 V
40
55
pF
C
CBO
Collector-base Capacitance
V
CB
= 10 V
6
10
pF
t
on
**
Turn-on Time
V
CC
= 30 V
22
35
ns
t
off
**
Turn-off Time
V
CC
= 30 V
40
60
ns
* Pulsed : pulse duration = 300
μ
s, duty cycle = 1 %.
** See test circuit.
THERMAL DATA
R
th j-case
R
th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
50
219
°
C/W
°
C/W
BSX32
2/6
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