參數(shù)資料
型號: BSS131Q62702-S565
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: 晶體管SOT23封裝貼片MOSFET的
文件頁數(shù): 2/5頁
文件大小: 54K
代理商: BSS131Q62702-S565
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 50 V, V
GS
= 0 V
50
V
Zero Gate Voltage Drain Current
0.5
μA
T
J
=125°C
5
μA
V
DS
= 30 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 1)
Gate - Body Leakage, Forward
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 10 V, I
D
= 0.22 A
V
GS
= 4.5 V, I
D
= 0.22 A
V
DS
= 10 V, I
D
= 0.22 A
0.8
1.3
1.6
V
Static Drain-Source On-Resistance
0.81
3.5
1.16
6
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
0.12
0.45
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 1)
Input Capacitance
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
30
60
pF
Output Capacitance
15
25
pF
Reverse Transfer Capacitance
7.5
10
pF
t
D(on)
t
r
t
D(off)
t
f
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - On Delay Time
V
DD
= 30 V, I
D
= 0.29 A,
V
GS
= 10 V, R
GEN
= 50
8
ns
Turn - On Rise Time
12
ns
Turn - Off Delay Time
16
ns
Turn - Off Fall Time
22
ns
I
S
I
SM
V
SD
Note:
1. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%.
Maximum Continuous Source Current
0.22
A
Maximum Pulse Source Current
(Note 1)
0.88
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.44 A
0.8
1.4
V
BSS138 Rev. A1
相關(guān)PDF資料
PDF描述
BSS15 Transient Voltage Suppressor Diodes
BSS17 Transient Voltage Suppressor Diodes
BSS33 Transient Voltage Suppressor Diodes
BSS170F Transient Voltage Suppressor Diodes
BSS26 Transient Voltage Suppressor Diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSS135 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
BSS138 功能描述:MOSFET SOT-23 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BSS138 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
BSS138 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
BSS138 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFETN CH50V0.22ASOT23 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET,N CH,50V,0.22A,SOT23