參數(shù)資料
型號： BSR16
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： PNP switching transistors
中文描述： PNP開關晶體管
封裝： BSR16<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;
文件頁數(shù)： 4/8頁
文件大?。?/td> 132K
代理商： BSR16
2004 Jan 13
4
NXP Semiconductors
Product data sheet
PNP switching transistors
BSR15; BSR16
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ
≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
BSR15
I
E
= 0; V
CB
=
50 V
I
E
= 0; V
CB
=
50 V; T
j
= 150
°
C
20
20
nA
μ
A
collector cut-off current
BSR16
I
E
= 0; V
CB
=
50 V
I
E
= 0; V
CB
=
50 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
0.1 mA; V
CE
=
10 V
10
10
50
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BSR15
BSR16
DC current gain
BSR15
BSR16
DC current gain
BSR15
BSR16
DC current gain
DC current gain
BSR15
BSR16
collector-emitter saturation
voltage
35
75
I
C
=
1 mA; V
CE
=
10 V
50
100
I
C
=
10 mA; V
CE
=
10 V
75
100
100
300
I
C
=
150 mA; V
CE
=
10 V; note 1
I
C
=
500 mA; V
CE
=
10 V; note 1
30
50
200
400
1.6
1.3
2.6
8
30
V
CEsat
I
C
=
150 mA; I
B
=
15 mA
I
C
=
500 mA; I
B
=
50 mA
I
C
=
150 mA; I
B
=
15 mA
I
C
=
500 mA; I
B
=
50 mA
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
2 V; f = 1 MHz
I
C
=
50 mA; V
CE
=
20 V; f = 100 MHz
mV
V
V
V
pF
pF
MHz
V
BEsat
base-emitter saturation voltage
C
c
C
e
f
T
Switching times (between 10% and 90% levels);
(see Fig.2)
collector capacitance
emitter capacitance
transition frequency
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
=
150 mA; I
Bon
=
15 mA;
I
Boff
= 15 mA
40
12
30
365
300
65
ns
ns
ns
ns
ns
ns
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