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參數(shù)資料
| 型號(hào)： | BSPD30N08S2-22 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 30A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 75V的五（巴西）直| 30A條（?。﹟對(duì)252AA |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 143K |
| 代理商： | BSPD30N08S2-22 |
2002-06-17
Page 2
SPD30N08S2-22
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
R
thJC
R
thJA
R
thJA
-
-
0.7
-
1.1
100
K/W
@ min. footprint
@ 6 cm
2
cooling area
3)
-
-
-
-
75
50
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
=80μA
Zero gate voltage drain current
V
(BR)DSS
75
-
-
V
V
GS(th)
2.1
3
4
V
DS
=75V,
V
GS
=0V,
T
j
=25°C
V
DS
=75V,
V
GS
=0V,
T
j
=125°C
Gate-source leakage current
I
DSS
-
-
0.01
1
1
100
μA
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
I
GSS
-
1
100
nA
V
GS
=10V,
I
D
=25A
R
DS(on)
-
16.7
21.5
m
1Current limited by bondwire ; with an
R
thJC
= 1.1K/W the chip is able to carry
I
D
= 52A at 25°C, for detailed
information see app.-note ANPS071E available at
www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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