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參數(shù)資料
| 型號(hào)： | BSP32 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | MEDIUM POWER AMPLIFIER |
| 中文描述： | 中功率功率放大器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 73K |
| 代理商： | BSP32 |
THERMAL DATA
R
thj-amb
R
thj-tab
Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Collecor Tab Max
62.5
8
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -60 V
V
CB
= -60 V T
j
= 150
o
C
I
C
= -100
μ
A
for
BSP30/BSP31
for
BSP32/BSP33
-100
-50
nA
μ
A
V
(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
-70
-90
V
V
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)CES
Collector-Emitter
Breakdown Voltage
(V
BE
= 0)
I
C
= -10 mA
for
BSP30/BSP31
for
BSP32/BSP33
I
C
= -10
μ
A
for
BSP30/BSP31
for
BSP32/BSP33
-60
-80
V
V
-70
-90
V
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
I
C
= -10
μ
A
-5
V
V
CE(sat)
I
C
= -150 mA I
B
= -15 mA
I
C
= -500 mA I
B
= -50 mA
-0.25
-0.5
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= -150 mA I
B
= -15 mA
I
C
= -500 mA I
B
= -50 mA
for
BSP30/BSP31
I
C
= -100
μ
A V
CE
= -5 V
I
C
= -100 mA V
CE
= -5 V
I
C
= -500 mA V
CE
= -5 V
for
BSP32/BSP33
I
C
= -100
μ
A V
CE
= -5 V
I
C
= -100 mA V
CE
= -5 V
I
C
= -500 mA V
CE
= -5 V
-1
-1.2
V
V
h
FE
DC Current Gain
10
40
30
30
50
50
120
300
f
T
Transition Frequency
I
C
= -50 mA V
CE
= -10 V f = 35 MHz
100
MHz
C
CBO
Collector-Base
Capacitance
Emitter-Base
Capacitance
Turn-on Time
I
E
= 0 V
CB
= -10 V f = 1 MHz
20
pF
C
EBO
I
C
= 0 V
EB
= -0.5 V f = 1 MHz
120
pF
t
on
I
C
= -100 mA I
B1
= -I
B2
= -5 mA
500
ns
t
off
Turn-on Time
650
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
1.5 %
BSP30/31/32/33
2/4
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BSP-32 | 制造商:Cherry Aerospace 功能描述: |
| BSP32 T/R | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BSP32,115 | 功能描述:兩極晶體管 - BJT TRANS MED PWR TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BSP32/T1 | 制造商:NXP Semiconductors 功能描述: |
| BSP320 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Small-Signal-Transistor |
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