10H/100H TTL DC ELECTRICAL CHARACTERISTICS" />
參數(shù)資料
型號(hào): BSO220N03MD G
廠商: Infineon Technologies
文件頁數(shù): 4/5頁
文件大?。?/td> 0K
描述: MOSFET N-CH DUAL 30V 6A DSO-8
產(chǎn)品目錄繪圖: Mosfets DSO-8
標(biāo)準(zhǔn)包裝: 1
系列: OptiMOS™
FET 型: 2 個(gè) N 溝道(雙)
FET 特點(diǎn): 邏輯電平門
漏極至源極電壓(Vdss): 30V
電流 - 連續(xù)漏極(Id) @ 25° C: 6A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 22 毫歐 @ 7.7A,10V
Id 時(shí)的 Vgs(th)(最大): 2.1V @ 250µA
閘電荷(Qg) @ Vgs: 10nC @ 10V
輸入電容 (Ciss) @ Vds: 800pF @ 15V
功率 - 最大: 1.4W
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: PG-DSO-8
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: BSO220N03MD GDKR
4
SY10H607
SY100H607
Micrel, Inc.
M9999-032906
hbwhelp@micrel.com or (408) 955-1690
10H/100H TTL DC ELECTRICAL CHARACTERISTICS(1)
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Condition
VOH
Output HIGH Voltage
2.5
2.5
2.5
VIOH = –15mA
2.0
2.0
2.0
IOH = –24mA
VOL
Output LOW Voltage
0.55
0.55
0.55
V
IOL = 48mA
VCCT = VCCE = 5.0V
±5%
Note:
1. DC levels such as VOH, VOL, etc., are standard for PECL and FAST devices, with the exceptions of: IOL =48mA at 0.5 VOL; and IOH = 24mA at 2.0 VOH.
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Condition
tPD
Propagation Delay
ns
CL = 50 pF
to Output
CLK to Q
——
6.0
——
6.0
——
6.0
MR to Q
——
6.0
——
6.0
——
6.0
tskpp
Part-to-Part Skew(1,4)
——
0.5
——
0.5
——
0.5
ns
CL = 50pF
tskew++
Within-Device Skew(2,4)
——
0.3
——
0.3
——
0.3
ns
CL = 50pF
tskew– –
Within-Device Skew(3,4)
——
0.3
——
0.3
——
0.3
ns
CL = 50pF
tS
Set-up Time
0.200
——
0.200
——
0.200
——
ns
tH
Hold Time
0.500
——
0.500
——
0.500
——
ns
tPW
Minimum Pulse Width
ns
CLK, MR
1.0
——
1.0
——
1.0
——
VPP
Minimum Input Swing
200
150
200
150
200
150
mV
tr
Rise/Fall Time
——
1.5
——
1.5
——
1.5
ns
CL = 50pF
tf
1.0V to 2.0V
fMAX
Max. Input Frequency(5,6)
160
——
160
——
160
——
MHz
AC ELECTRICAL CHARACTERISTICS(1)
VCCT = VCCE = 5.0V
±5%
Notes:
1. Device-to-Device Skew considering HIGH-to-HIGH transitions at common VCC level.
2. Within-Device Skew considering HIGH-to-HIGH transitions at common VCC level.
3. Within-Device Skew considering LOW-to-LOW transitions at common VCC level.
4. All skew parameters are guaranteed but not tested.
5. Frequency at which output levels will meet a 0.8V to 2.0V minimum swing.
6. The fMAX value is specified as the minimum guaranteed maximum frequency. Actual operational maximum frequency may be greater.
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