參數(shù)資料
型號(hào): BSM50GB120DLC
元件分類: 開(kāi)關(guān)
英文描述: TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 525K
代理商: BSM50GB120DLC
A-78
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Distinctive features
A
K
Approval and lists
CECC 96201-005
CECC 96201-008
MUAHAG and QPL listed (Europe only)
French defence approved : DAT list No A5999 X001.
This range of professional toggle switches is suitable for use in military and
other high specification environments.
K
Contacts
Highly reliable contacts suitable for low level applications (10mA 50mV -
10A 5VDC min.) or power applications (2A 250VAC - 4A 125VAC -
4A 30VDC max.)
K
Pinned lever
The base of the switch lever is pinned to the bushing, thus earthing the lever to
the bushing. This also provides strain relief to protect the switch if accidentally
knocked.
K
Double shell case
For high mechanical strength and high electrical insulation.
K
Compact size
The small rear end of the switch allows space saving behind the panel.
K
Finish
Matt black finish on body, bushing, lever and hardware.
K
Sealing
Panel sealed to IP 67, these switches are frontal sealed by two O-rings and
have full rear end sealing.
K
Accessories
A comprehensive range of protection boots (both full and half length), locking
levers and security caps are available.
相關(guān)PDF資料
PDF描述
BSM50GB120DN2 TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
BSM35GP120G TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
BSM200GB120DLC TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
BSM200GB120DN2 TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
BSM200GB170DLC TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSM50GB120DN2 功能描述:IGBT 模塊 1200V 50A DUAL RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
BSM50GB160D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.6KV V(BR)CES | 70A I(C)
BSM50GB170DN2 功能描述:IGBT 模塊 1700V 50A 500W HALF-BRIDGE RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
BSM50GB170DN2HOSA1 功能描述:IGBT Module Half Bridge 1700V 72A 500W Chassis Mount Module 制造商:infineon technologies 系列:- 零件狀態(tài):上次購(gòu)買時(shí)間 IGBT 類型:- 配置:半橋 電壓 - 集射極擊穿(最大值):1700V 電流 - 集電極(Ic)(最大值):72A 功率 - 最大值:500W 不同?Vge,Ic 時(shí)的?Vce(on):3.9V @ 15V,50A 電流 - 集電極截止(最大值):- 不同?Vce 時(shí)的輸入電容(Cies):8nF @ 25V 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:模塊 供應(yīng)商器件封裝:模塊 標(biāo)準(zhǔn)包裝:10
BSM50GB60DLC 功能描述:IGBT 模塊 600V 50A DUAL RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: