參數(shù)資料
型號: BSM35GD120D2
元件分類: 開關(guān)
英文描述: TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
文件頁數(shù): 3/7頁
文件大小: 525K
代理商: BSM35GD120D2
A-80
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Overview
A
12
SERIES
Terminals and bushings
1
Solder lug terminals,
threaded bushing
11,9 (15/32)
2
Straight PC terminals,
threaded bushing
11,9 (15/32)
Number of poles
4
Double pole
5
Three pole
6
Four pole
Electrical functions
6
ON
-
ON
9
ON
OFF
ON
7
MOM OFF
MOM
8
ON
OFF
MOM
4
ON
ON MOM
MOM ON MOM
5
ON
MOM
Function 4
. For 2 and 4 poles only.
. Must not have blank in
"momentary" box.
Momentary
1R
ON ON MOM
2R
MOM ON MOM
. For function 4 only.
. Leave blank for other
functions.
ABOUT THIS SERIES
On the following pages, you will find successively :
- model structure of switches
- options in the same order as in above chart
Dimensions
: first dimensions are in mm while inches are shown as bracketted numbers.
Fluorescent tip
Blank
None
0.38
White fluorescent
tip to lever
X778
High performance
fully sealed
matt black switches.
Levers
Blank
Standard lever
-12
Short lever
Locking levers
1V
1 locked position
2V
2 locked positions
3V
3 locked positions
Approval
CECC
Availability :
Consult factory for
details of approved
models.
Sealing boots
can be used to further protect the switches against dust and water. They are presented in section H.
Mounting accessories
: standard hardware supplied with all models : 1 hex nut 14 mm (.551) across flats, part number U41.
This nut is presented after model structure of switches.
Security caps
are available to prevent inadvertent lever operation. They are presented in section I.
Packaging unit
: 2 pole models : 25 pieces
3 and 4 pole models : 20 pieces
.
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參數(shù)描述
BSM35GD120DLC 制造商:EUPEC 制造商全稱:EUPEC 功能描述:IGBT-Module Maximum rated values
BSM35GD120DLCE3224 功能描述:IGBT 模塊 N-CH 1.2KV 70A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
BSM35GD120DN2 功能描述:IGBT 模塊 1200V 35A 3-PHASE RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
BSM35GD120DN2E3224 功能描述:IGBT 模塊 N-CH 1.2KV 50A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
BSM35GP120 功能描述:IGBT 模塊 1200V 35A PIM RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: