型號(hào): | BSM200GAL120DN2 |
元件分類: | 開關(guān) |
英文描述: | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
文件頁數(shù): | 4/7頁 |
文件大?。?/td> | 525K |
代理商: | BSM200GAL120DN2 |
相關(guān)PDF資料 |
PDF描述 |
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BSM50GAL120DN2 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
BSM100GD120DN2 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
BSM50GD120DN2 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
BSM50GD120DN2E3226 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
BSM50GD120DN2G | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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BSM200GAR120DN2 | 功能描述:IGBT 模塊 1200V 200A GAR CH RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
BSM200GB120 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes) |
BSM200GB120DL | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes) |
BSM200GB120DLC | 功能描述:IGBT 模塊 1200V 200A DUAL RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
BSM200GB120DLC_E3256 | 功能描述:IGBT 模塊 IGBT 1200V 200A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |