參數資料
型號： BS62UV4000SC
廠商： BRILLIANCE SEMICONDUCTOR, INC.
英文描述： Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit
中文描述： 超低功率/電壓CMOS SRAM的為512k × 8位
文件頁數： 1/11頁
文件大?。?/td> 336K
代理商： BS62UV4000SC
Revision 2.4
April 2002
1
R0201-BS62UV4000
Ultra Low Power/Voltage CMOS SRAM
512K X 8 bit
Ultra low operation voltage : 1.8V ~ 3.6V
Ultra low power consumption :
Vcc = 2.0V C-grade: 15mA (Max.) operating current
I -grade: 20mA (Max.) operating current
0.2uA (Typ.) CMOS standby current
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I -grade: 25mA (Max.) operating current
0.25uA (Typ.) CMOS standby current
High speed access time :
-70 70ns (Max.) at Vcc = 2.0V
-10 100ns (Max.) at Vcc = 2.0V
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE and OE options
PRODUCT FAMILY
The BS62UV4000 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 524,288 words by 8 bits
and operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.2uA and maximum access time of 70ns in 2.0V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE), and active LOW output enable (OE) and three-state
output drivers.
The BS62UV4000 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62UV4000 is available in the JEDEC standard 32 pin SOP
, TSOP, TSOP II and STSOP
DESCRIPTION
FEATURES
BLOCK DIAGRAM
PIN CONFIGURATIONS
Brilliance Semiconductor Inc
.
reserves the right to modify document contents without notice.
Address
Input
Buffer
Row
Decoder
Memory Array
2048 X 2048
Column I/O
Sense Amp
Write Driver
Column Decoder
Data
Output
Buffer
Address Input Buffer
Data
Input
Buffer
Control
GND
Vdd
OE
WE
CE
DQ5
DQ6
DQ4
A13
A17
A15
A18
A16
A14
A12
A7
A6
A5
A4
8
8
8
8
DQ7
DQ3
DQ2
DQ1
DQ0
16
256
2048
2048
22
A11 A9 A8 A3 A2 A1 A0 A10
BS62UV4000
BSI
POWER DISSIPATION
STANDBY
( I
CCSB1
SPEED
( ns )
Operating
CC
PKG
TYPE
BS62UV4000TC
BS62UV4000STC
BS62UV4000SC
BS62UV4000EC
BS62UV4000PC
BS62UV4000TI
BS62UV4000STI
BS62UV4000SI
BS62UV4000EI
BS62UV4000PI
TSOP
-
32
STSOP
-
32
SOP
-
32
TSOP2
-
32
PDIP
-
32
TSOP
-
32
STSOP
-
32
SOP
-
32
TSOP2
-
32
PDIP
-
32
+0
O
C to +70
O
C
1.8V ~ 3.6V
70 / 100
1uA
1.5uA
15mA
20mA
-
40
O
C to +85
O
C
1.8V ~ 3.6V
70 / 100
2uA
3uA
20mA
25mA
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
A11
A9
A8
A13
WE
A17
A15
VC
C
A18
A16
A14
A12
A7
A6
A5
A4
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
BS62UV4000TC
BS62UV4000STC
BS62UV4000TI
BS62UV4000STI
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
BS62UV4000SC
BS62UV4000SI
BS62UV4000EC
BS62UV4000EI
BS62UV4000PC
BS62UV4000PI
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc = 2.0V
Vcc = 2.0V
Vcc = 2.0V
Vcc =3.0V
Vcc =3.0V
相關PDF資料
PDF描述
BS62UV4000SI Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62UV4000STC Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62UV4000STI Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62UV4000TC Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62UV4000TI Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit
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