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參數(shù)資料
| 型號： | BS62UV1027SI-85 |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| 中文描述： | 超低功率/電壓CMOS SRAM的128K的× 8位 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 434K |
| 代理商： | BS62UV1027SI-85 |
Revision 2.1
Jan.
2004
6
R0201-BS62UV1027
AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
WRITE CYCLE
BSI
BS62UV1027
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WR1
t WC
(3)
t CW
(11)
t CW
(2)
t WP
t AW
t OHZ
(4,10)
t AS
t WR2
(3)
t DH
t DW
D
IN
D
OUT
WE
CE2
CE1
OE
ADDRESS
(5)
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
(Vcc = 1.9~3.6V)
UNIT
t
AVAX
t
WC
Write Cycle Time
85
--
100
--
ns
t
E1LWH
t
CW
Chip Select to End of Write
85
--
100
--
ns
t
AVWL
t
AS
Address Setup Time
0
--
0
--
ns
t
AVWH
t
AW
Address Valid to End of Write
85
--
100
--
ns
t
WLWH
t
WP
Write Pulse Width
40
--
50
--
ns
t
WHAX
t
WR1
Write recovery Time
(CE1,WE)
0
--
0
--
ns
t
E2LAX
t
WR2
(CE2)
0
--
0
--
ns
t
WLQZ
t
WHZ
Write to Output in High Z
--
35
--
40
ns
t
DVWH
t
DW
Data to Write Time Overlap
35
--
40
--
ns
t
WHDX
t
DH
Data Hold from Write Time
0
--
0
--
ns
t
GHQZ
t
OHZ
Output Disable to Output in High Z
--
35
--
40
ns
t
WHOX
t
OW
End of Write to Output Active
10
--
10
--
ns
MIN. TYP. MAX.
Write recovery Time
CYCLE TIME : 85ns
CYCLE TIME : 100ns
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