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| 型號： | BS62UV1024PI |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| 中文描述： | 超低功率/電壓CMOS SRAM的128K的× 8位 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 390K |
| 代理商： | BS62UV1024PI |
Revision 2.2
April 2001
1
R0201-BS62UV1024
Ultra Low Power/Voltage CMOS SRAM
128K X 8 bit
Ultra low operation voltage : 1.8V ~ 3.6V
Ultra low power consumption :
Vcc = 2.0V
C-grade : 10mA (Max.) operating current
I- grade : 15mA (Max.) operating current
0.01uA (Typ.) CMOS standby current
Vcc = 3.0V C-grade : 20mA (Max.) operating current
I- grade : 25mA (Max.) operating current
0.02uA (Typ.) CMOS standby current
High speed access time :
-15 150ns (Max.) at Vcc = 2.0V
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE2, CE1, and OE options
PRODUCT FAMILY
The BS62UV1024 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.01uA and maximum access time of 150ns in 2V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62UV1024 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62UV1024 is available in the JEDEC standard 32 pin
450mil Plastic SOP, 8mmx13.4mm STSOP 300mil Plastic SOJ and
8mmx20mm TSOP.
DESCRIPTION
FEATURES
BLOCK DIAGRAM
PIN CONFIGURATIONS
Brilliance Semiconductor Inc
.
reserves the right to modify document contents without notice.
BS62UV1024
A7
A12
Address
Input
Buffer
Row
Decoder
Memory Array
1024 x 1024
Column I/O
Sense Amp
Write Driver
Column Decoder
Data
Output
Buffer
Address Input Buffer
A3 A2 A1 A0 A10
Data
Input
Buffer
Control
Gnd
Vdd
OE
WE
CE1
DQ5
DQ6
DQ4
A14
A16
A15
A8
A9
A11
A13
8
8
8
8
DQ7
DQ3
DQ2
DQ1
DQ0
A6
14
128
1024
1024
20
A4
A5
CE2
BSI
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
BS62UV1024TC
BS62UV1024STC
BS62UV1024TI
BS62UV1024STI
POWER DISSIPATION
STANDBY
(I
CCSB1
, Max)
Vcc=
3.0V
2.0V
SPEED
(ns)
Operating
(I
CC
, Max)
Vcc=
3.0V
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=
2.0V
Vcc=
Vcc=
2.0V
PKG TYPE
BS62UV1024SC
BS62UV1024TC
BS62UV1024JC
BS62UV1024STC
BS62UV1024PC
BS62UV1024DC
BS62UV1024SI
BS62UV1024TI
BS62UV1024JI
BS62UV1024STI
BS62UV1024PI
BS62UV1024DI
SOP-32
TSOP-32
SOJ-32
STSOP-32
PDIP-32
DICE
SOP-32
TSOP-32
SOJ-32
STSOP-32
PDIP-32
DICE
O
C to +70
O
C
1.8V ~ 3.6V
+0
150
1.0uA
0.3uA
20mA
10mA
-40
O
C to +85
O
C
1.8V ~ 3.6V
150
25mA
15mA
1.5uA
1uA
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
BS62UV1024SC
BS62UV1024SI
BS62UV1024PC
BS62UV1024PI
BS62UV1024JC
BS62UV1024JI
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BS62UV1024SC | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62UV1024SI | Sensor Magnet; For Use With:LY-30 Series Sensor; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes |
| BS62UV1024STC | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62UV1024STI | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62UV1024TC | Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
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