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參數(shù)資料
| 型號： | BS62LV8005BI |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | DDR-II, 25-Bit 1:1 or 14-Bit 1:2 Configurable Registered Buffer |
| 中文描述： | 非常低功率/電壓CMOS SRAM的100萬× 8位 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 218K |
| 代理商： | BS62LV8005BI |
Revision 2.4
April 2002
1
R0201-BS62LV8005
Very Low Power/Voltage CMOS SRAM
1M X 8 bit
Wide Vcc operation voltage : 4.5V ~ 5.5V
Very low power consumption :
Vcc = 5V C-grade: 45mA (Max.) operation current
I -grade: 50mA (Max.) operating current
3uA (Typ.) CMOS standby current
High speed access time :
-55 55ns (Max) at Vcc = 5V
-70 70ns (Max) at Vcc = 5V
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE1, CE2 and OE options
The BS62LV8005 is a high performance, very low power CMOS
Static Random Access Memory organized as 1,048,576 words by 8 bits
and operates from a wide range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
3uA and maximum access time of 55ns in 5V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable(CE2) and active LOW output
enable (OE) and three-state output drivers.
The BS62LV8005 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV8005 is available in 44 pin TSOP2 and 48-pin BGA type.
GENERAL DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor Inc
. reserves the right to modify document contents without notice.
Address
Input
Buffer
Row
Decoder
Memory Array
2048 X 4096
Column I/O
Sense Amp
Write Driver
Column Decoder
Data
Output
Buffer
Address Input Buffer
Data
Input
Buffer
Control
Gnd
Vdd
OE
WE
CE2
DQ5
DQ6
DQ4
A13
A17
A15
A18
A16
A14
A12
A7
A6
A5
A4
8
8
8
8
DQ7
DQ3
DQ2
DQ1
DQ0
18
512
4096
2048
22
A11A9 A8 A3 A2 A1 A0A10 A19
BS62LV8005
POWER DISSIPATION
STANDBY
( I
, Max )
CCSB1
SPEED
( ns )
Operating
( I
, Max )
CC
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=5V
Vcc=5V
Vcc=5V
PKG TYPE
BS62LV8005EC
BS62LV8005BC
BS62LV8005EI
BS62LV8005BI
TSOP2-44
BGA-48-0810
TSOP2-44
BGA-48-0810
+0
O
C to +70
O
C
4.5V ~ 5.5V
55 / 70
30uA
45mA
-40
O
C to +85
O
C
4.5V ~ 5.5V
55 / 70
50uA
50mA
A4
A3
A2
A1
A0
NC
NC
DQ0
DQ1
VCC
GND
DQ2
DQ3
NC
NC
WE
A19
A18
A17
A16
A15
CE1
A5
A6
A7
OE
CE2
A8
NC
NC
DQ7
DQ6
GND
VCC
DQ5
DQ4
NC
NC
A9
A10
A11
A12
A13
A14
1
2
3
4
5
6
11
12
13
14
15
16
17
18
19
20
21
22
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
BS62LV8005EC
BS62LV8005EI
7
8
9
10
44
CE1
G
H
F
E
D
C
B
A
1
2
3
4
5
6
A9
A8
A11
A10
A18
A19
VSS
A12
A14
A17
A13
A15
WE
A16
A7
VCC
VSS
VCC
NC
NC
NC
NC
NC
D3
D2
D1
D7
D6
D5
VCC
A5
OE
A3
A0
A6
A4
A1
A2
CE2
NC
NC
NC
NC
NC
CE1
D4
NC
D0
BSI
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BS62LV8005 | Very Low Power/Voltage CMOS SRAM 1M X 8 bit |
| BS62LV8005EC | Very Low Power/Voltage CMOS SRAM 1M X 8 bit |
| BS62LV8005EI | Very Low Power/Voltage CMOS SRAM 1M X 8 bit |
| BS62LV8006FI | Very Low Power/Voltage CMOS SRAM 1M X 8 bit |
| BS62LV8006FI-55 | Very Low Power/Voltage CMOS SRAM 1M X 8 bit |
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| BS-632-1 | 制造商:PennEngineering (PEM) 功能描述: |
| BS6322 | 制造商:n/a 功能描述:Ships in 2 days |
| BS-632-2 | 制造商:PennEngineering (PEM) 功能描述: |
| BS640GBC3V | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| BS640GBC4V | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
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