參數(shù)資料
型號(hào): BS62LV4007SIG70
廠商: BRILLIANCE SEMICONDUCTOR, INC.
英文描述: Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0106-2 00; No. of Positions: 7; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 1.25; Terminal Pitch (mm): 1.25; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Single row
中文描述: 非常低功率/電壓CMOS SRAM的為512k × 8位
文件頁(yè)數(shù): 6/10頁(yè)
文件大?。?/td> 373K
代理商: BS62LV4007SIG70
Revision 1.1
Jan. 2004
6
JEDEC
PARAMETER
NAME
t
AVAX
DESCRIPTION
UNIT
t
WC
Write Cycle Time
55
--
--
70
--
--
ns
t
E1LWH
t
CW
Chip Select to End of Write
55
--
--
70
--
--
ns
t
AVWL
t
AS
Address Set up Time
0
--
--
0
--
--
ns
t
AVWH
t
AW
Address Valid to End of Write
55
--
--
70
--
--
ns
t
WLWH
t
WP
Write Pulse Width
30
--
--
35
--
--
ns
t
WHAX
t
WR
Write Recovery Time
(CE , WE)
0
--
--
0
--
--
ns
t
WLOZ
t
WHZ
Write to Output in High Z
--
--
25
--
--
30
ns
t
DVWH
t
DW
Data to Write Time Overlap
25
--
--
30
--
--
ns
t
WHDX
t
DH
Data Hold from Write Time
0
--
--
0
--
--
ns
t
GHOZ
t
OHZ
Output Disable to Output in High Z
--
--
25
--
--
30
ns
t
WHQX
t
OW
End ot Write to Output Active
5
--
--
5
--
--
ns
R0201-BS62LV4007
AC ELECTRICAL CHARACTERISTICS
( TA = -40 to + 85
o
C )
WRITE CYCLE
BSI
BS62LV4007
PARAMETER
NAME
MIN.
TYP. MAX.
(Vcc = 4.5~5.5V)
MIN.
TYP. MAX.
(Vcc = 4.5~5.5V)
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1
(1)
t
WR
(3)
t
CW
(11)
(2)
t
WP
t
AW
t
OHZ
(4,10)
t
AS
t
DH
t
DW
D
IN
D
OUT
WE
CE
OE
ADDRESS
(5)
t
WC
CYCLE TIME : 55ns
CYCLE TIME : 70ns
相關(guān)PDF資料
PDF描述
BS62LV4007EI-55 Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4007EI-70 Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4007PC-55 Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4007PC-70 Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4007SC-55 Very Low Power/Voltage CMOS SRAM 512K X 8 bit
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