參數(shù)資料
型號： BS62LV4007SC
廠商： BRILLIANCE SEMICONDUCTOR, INC.
英文描述： Very Low Power/Voltage CMOS SRAM 512K X 8 bit
中文描述： 非常低功率/電壓CMOS SRAM的為512k × 8位
文件頁數(shù)： 1/10頁
文件大?。?/td> 373K
代理商： BS62LV4007SC
Revision 1.1
Jan. 2004
1
R0201-BS62LV4007
Very Low Power/Voltage CMOS SRAM
512K X 8 bit
Vcc operation voltage : 4.5V ~ 5.5V
Very low power consumption :
Vcc = 5.0V C-grade: 68mA (@55ns) operating current
I -grade: 70mA (@55ns) operating current
C-grade: 58mA (@70ns) operating current
I -grade: 60mA (@70ns) operating current
2.0uA (Typ.) CMOS standby current
High speed access time :
-55 55ns
-70 70ns
Automatic power down when chip is deselected
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE and OE options
Three state outputs and TTL compatible
The BS62LV4007 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 words by 8 bits
and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
2.0uA at
5.0V/25
o
C
and maximum access time of 55ns at
5.0V/85
o
C
.
Easy memory expansion is provided by an active LOW chip enable
(CE) , and active LOW output enable (OE) and three-state output
drivers.
The BS62LV4007 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV4007 is available in the JEDEC standard 32L SOP, TSOP
, PDIP, TSOP II and STSOP package.
DESCRIPTION
FEATURES
BLOCK DIAGRAM
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc
.
reserves the right to modify document contents without notice.
Address
Input
Buffer
Row
Decoder
Memory Array
2048 X 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Output
Buffer
Address Input Buffer
Data
Input
Buffer
Control
GND
Vdd
OE
WE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
A13
A17
A15
A18
A16
A14
A12
A7
A6
A5
A4
8
8
8
8
16
256
2048
2048
22
A11 A9 A8 A3 A2 A1 A0 A10
BS62LV4007
BSI
POWER DISSIPATION
STANDBY
( I
CCSB1
SPEED
( ns )
Operating
CC
Vcc = 5.0V
PKG
TYPE
BS62LV4007TC
BS62LV4007STC
BS62LV4007SC
BS62LV4007EC
BS62LV4007PC
BS62LV4007TI
BS62LV4007STI
BS62LV4007SI
BS62LV4007EI
BS62LV4007PI
TSOP
-
32
STSOP
-
32
SOP
-
32
TSOP2
-
32
PDIP
-
32
TSOP
-
32
STSOP
-
32
SOP
-
32
TSOP2
-
32
PDIP
-
32
+0
O
C to +70
O
C
4.5V ~ 5.5V
55 / 70
30uA
68mA
58mA
-
40
O
C to +85
O
C
4.5V ~ 5.5V
55 / 70
60uA
70mA
60mA
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
BS62LV4007TC
BS62LV4007STC
BS62LV4007TI
BS62LV4007STI
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
BS62LV4007SC
BS62LV4007SI
BS62LV4007EC
BS62LV4007EI
BS62LV4007PC
BS62LV4007PI
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
55ns:4.5~5.5V
70ns:4.5~5.5V
Vcc =5.0V
Vcc =5.0V
相關(guān)PDF資料
PDF描述
BS62LV4007SCG70 Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4007SCP55 Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4007SCP70 Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4007SI Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BS62LV4007SIP55 Very Low Power/Voltage CMOS SRAM 512K X 8 bit
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