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參數(shù)資料
| 型號： | BS62LV4000TC |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 512K X 8 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的為512k × 8位 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 213K |
| 代理商： | BS62LV4000TC |
Revision 2.2
April. 2001
1
R0201-BS62LV4000
Very Low Power/Voltage CMOS SRAM
512K X 8 bit
Wide Vcc operation voltage : 2.7V ~ 3.6V
Very low power consumption :
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I -grade: 25mA (Max.) operating current
0.5uA (Typ.) CMOS standby current
High speed access time :
-70 70ns (Max) at Vcc = 3.0V
-10 100ns (Max) at Vcc = 3.0V
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE and OE options
The BS62LV4000 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 words by 8 bits
and operates from a wide range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.5uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE), and active LOW output enable (OE) and three-state
output drivers.
The BS62LV4000 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV4000 is available in the JEDEC standard 32 pin
, 8mmx13.4mm STSOP, and 8mmx20mm TSOP.
GENERAL DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor Inc
. reserves the right to modify document contents without notice.
Address
Input
Buffer
Row
Decoder
Memory Array
2048 X 2048
Column I/O
Sense Amp
Write Driver
Column Decoder
Data
Output
Buffer
Address Input Buffer
Data
Input
Buffer
Control
Gnd
Vdd
OE
WE
CE
DQ5
DQ6
DQ4
A13
A17
A15
A18
A16
A14
A12
A7
A6
A5
A4
8
8
8
8
DQ7
DQ3
DQ2
DQ1
DQ0
16
256
2048
2048
22
A11 A9 A8 A3 A2 A1 A0 A10
BS62LV4000
POWER DISSIPATION
STANDBY
( I
CCSB1
, Max )
SPEED
( ns )
Operating
( I
CC
, Max )
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=3.0V
Vcc=3.0V
Vcc=3.0V
PKG TYPE
BS62LV4000TC
BS62LV4000STC
BS62LV4000TI
BS62LV4000STI
TSOP-32
STSOP-32
TSOP-32
STSOP-32
+0
O
C to +70
O
C
2.7V ~ 3.6V
70 / 100
8uA
20mA
-40
O
C to +85
O
C
2.7V ~ 3.6V
70 / 100
12uA
25mA
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
BS62LV4000TC
BS62LV4000STC
BS62LV4000TI
BS62LV4000STI
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
BSI
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BS62LV4000TI | Very Low Power/Voltage CMOS SRAM 512K X 8 bit |
| BS62LV4001 | Low Power/Voltage CMOS SRAM 512K X 8 bit |
| BS62LV4001DC | Low Power/Voltage CMOS SRAM 512K X 8 bit |
| BS62LV4001DI | Low Power/Voltage CMOS SRAM 512K X 8 bit |
| BS62LV4001EC | Low Power/Voltage CMOS SRAM 512K X 8 bit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS62LV4006ECP55 | 制造商:Brilliance Semiconductor Inc 功能描述:IC 4MB CMOS SRAM 62LV4006 TSOP32 |
| BS62LV4006EIP55 | 制造商:Brilliance Semiconductor Inc 功能描述:IC SRAM 4M 512KX8 2.4-5.5V SMD 制造商:Brilliance Semiconductor Inc 功能描述:IC, SRAM 4M, 512KX8, 2.4-5.5V, SMD |
| BS62LV4006PCP55 | 制造商:Brilliance Semiconductor Inc 功能描述:IC 4MB CMOS SRAM 62LV4006 DIP32 |
| BS62LV4006PIP55 | 制造商:Brilliance Semiconductor Inc 功能描述:SRAM 4M 512KX8 2.4-5.5V PDIP32 |
| BS62LV4006SCP55 | 制造商:Brilliance Semiconductor Inc 功能描述:4MB CMOS SRAM SMD 62LV4006 SOP32 |
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