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| 型號(hào)： | BS62LV2006HCG55 |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power CMOS SRAM 256K X 8 bit |
| 中文描述： | 非常低功耗CMOS SRAM 256K × 8位 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 361K |
| 代理商： | BS62LV2006HCG55 |
Very Low Power CMOS SRAM
256K X 8 bit
Pb-Free and Green package materials are compliant to RoHS
BS62LV2006
R0201-BS62LV2006
Revision
May.
1.3
2006
1
n
FEATURES
Wide V
CC
operation voltage : 2.4V ~ 5.5V
Very low power consumption :
V
CC
= 3.0V Operation current : 23mA (Max.) at 55ns
Standby current : 0.1uA (Typ.) at 25
C
V
CC
= 5.0V Operation current : 55mA (Max.) at 55ns
Standby current : 0.6uA (Typ.) at 25
C
High speed access time :
-55
55ns (Max.) at V
CC
:
3.0~5.5V
-70
70ns (Max.) at V
CC
:
2.7~5.5V
Automatic power down when chip is deselected
Easy expansion with CE2, CE1 and OE options
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
n
POWER CONSUMPTION
2mA (Max.) at 1MHz
10mA (Max.) at 1MHz
n
DESCRIPTION
The BS62LV2006 is a high performance, very low power CMOS
Static Random Access Memory organized as 262,144 by 8 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.1uA at 3.0V/25
O
C and maximum access time of 55ns at
3.0V/85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2), and active LOW output
enable (OE) and three-state output drivers.
The BS62LV2006 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS62LV2006 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 8mmx13.4mm STSOP, 8mmx20mm TSOP and
36-ball BGA package.
POWER DISSIPATION
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
V
CC
=5V
10MHz
V
CC
=3V
10MHz
PRODUCT
FAMILY
OPERATING
TEMPERATURE
V
CC
=5.0V V
CC
=3.0V
1MHz
f
Max.
1MHz
f
Max.
PKG TYPE
BS62LV2006DC
BS62LV2006HC
BS62LV2006SC
BS62LV2006STC
BS62LV2006TC
BS62LV2006HI
BS62LV2006SI
BS62LV2006STI
BS62LV2006TI
DICE
BGA-36-0608
SOP-32
STSOP-32
TSOP-32
BGA-36-0608
SOP-32
STSOP-32
TSOP-32
Commercial
+0
C to +70
O
C
6.0uA
0.7uA
9mA
29mA
53mA
1.5mA
9mA
22mA
Industrial
-40
O
C to +85
O
C
20uA
2.0uA
10mA
30mA
55mA
2mA
10mA
23mA
n
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
n
BLOCK DIAGRAM
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A17
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
BS62LV2006SC
OE
A10
DQ7
DQ6
DQ5
DQ4
GND
DQ1
DQ0
A0
A1
A3
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A11
A9
A8
A13
WE
CE2
A15
A17
A14
A12
A7
A6
A5
A4
BS62LV2006TC
BS62LV2006TI
BS62LV2006STC
BS62LV2006STI
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Address
Input
Buffer
Row
Decoder
Memory Array
1024 x 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Address Input Buffer
A4 A3 A2 A1 A0
Data
Buffer
Control
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
A7
A12
A14
A16
A17
A15
A11
A8
A9
A13
8
8
8
8
8
256
2048
1024
10
A10
A6
CE2
CE1
WE
OE
V
CC
GND
Data
Output
Buffer
A5
G
H
F
E
D
C
B
A
1
2
3
4
5
6
A11
A13
A12
A14
CE1
NC
A16
A17
A15
DQ3
DQ2
VSS
VCC
NC
A1
WE
CE2
A5
A4
A3
A6
A8
A2
A7
DQ1
DQ0
36-ball BGA top view
A0
DQ4
DQ5
VSS
VCC
DQ6
DQ7
A9
OE
A10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BS62LV2006HCG70 | Very Low Power CMOS SRAM 256K X 8 bit |
| BS62LV2006HCP55 | Very Low Power CMOS SRAM 256K X 8 bit |
| BS62LV2006HCP70 | Very Low Power CMOS SRAM 256K X 8 bit |
| BS62LV2006HI55 | Very Low Power CMOS SRAM 256K X 8 bit |
| BS62LV2006HI70 | Very Low Power CMOS SRAM 256K X 8 bit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS62LV2006HCG70 | 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 256K X 8 bit |
| BS62LV2006HCP55 | 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 256K X 8 bit |
| BS62LV2006HCP70 | 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 256K X 8 bit |
| BS62LV2006HI55 | 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 256K X 8 bit |
| BS62LV2006HI70 | 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 256K X 8 bit |
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