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參數(shù)資料
| 型號： | BS62LV2000STI |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的256K × 8位 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 282K |
| 代理商： | BS62LV2000STI |
R0201-BS62LV2000
Revision 2.3
April 2002
1
A17
A15
Very Low Power/Voltage CMOS SRAM
256K X 8 bit
Wide Vcc operation voltage : 2.7V ~ 5.5V
Very low power consumption :
Vcc = 3.0V C-grade : 20mA (Max.) operating current
I- grade : 25mA (Max.) operating current
0.15uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade : 40mA (Max.) operating current
I- grade : 45mA (Max.) operating current
3uA (Typ.) CMOS standby current
High speed access time :
-70 70ns(Max.) at Vcc = 3.0V
-10
100ns(Max.) at Vcc = 3.0V
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE2, CE1, and OE options
All I/O pins are 3V/5V tolerant
PRODUCT FAMILY
The BS62LV2000 is a high performance, very low power CMOS
Static Random Access Memory organized as 262,144 words by 8 bits
and operates from a wide range of 2.7V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.15uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62LV2000 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV2000 is available in the JEDEC standard 32 pin
450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP.
DESCRIPTION
FEATURES
BLOCK DIAGRAM
PIN CONFIGURATIONS
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Brilliance Semiconductor Inc
.
reserves the right to modify document contents without notice.
Address
Input
Buffer
Row
Decoder
Memory Array
1024 x 2048
Column I/O
Sense Amp
Write Driver
Column Decoder
Data
Buffer
Address Input Buffer
A8 A3 A2 A1
A10
Data
Input
Buffer
Control
Gnd
Vdd
OE
DQ7
DQ6
DQ5
DQ4
A16
A14
A12
A6
A5
A4
A7
8
8
8
8
DQ3
DQ2
DQ1
DQ0
A13
16
256
2048
1024
20
A9
BS62LV2000
A11
A0
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
A11
A9
A8
A13
WE
CE2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
BS62LV2000TC
BS62LV2000STC
BS62LV2000TI
BS62LV2000STI
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
WE
CE1
CE2
BSI
POWER DISSIPATION
STANDBY
(I
CCSB1
, Max)
SPEED
(ns)
Operating
(I
CC
, Max)
PRODUCT
FAMILY
Vcc
RANGE
PKG TYPE
BS62LV2000TC
BS62LV2000STC
BS62LV2000SC
BS62LV2000TI
BS62LV2000STI
BS62LV2000SI
TSOP
-
32
STSOP
-
32
SOP
-
32
TSOP
-
32
STSOP
-
32
SOP
-
32
+0
O
C to +70
O
C
2.7V ~ 5.5V
70 / 100
10uA
3uA
mA
40
20mA
-40 C to +85
O
C
2.7V ~ 5.5V
70 / 100
20uA
5uA
45mA
25mA
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A17
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
BS62LV2001SC
BS62LV2001SI
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OPERATING
TEMPERATURE
Vcc=3V
Vcc=5V
Vcc=3V Vcc=5V Vcc=3V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BS62LV2000TC | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2000TI | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2000 | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2000SC | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2000SI | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS62LV2000TC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2000TI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2001 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2001DC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2001DI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
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