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參數(shù)資料
| 型號： | BS62LV1603FCG55 |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 元件分類： | DRAM |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 2M X 8 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的2米x 8位 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 263K |
| 代理商： | BS62LV1603FCG55 |
Revision 1.1
Jan.
2004
1
R0201-BS62LV1603
Very Low Power/Voltage CMOS SRAM
2M X 8 bit
Vcc operation voltage : 2.7V ~ 3.6V
Very low power consumption :
Vcc = 3.0V C-grade: 45mA (@55ns) operating current
I -grade: 46mA (@55ns) operating current
C-grade: 36mA (@70ns) operating current
I -grade: 37mA (@70ns) operating current
3.0uA (Typ.) CMOS standby current
High speed access time :
-55 55ns
-70 70ns
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE1, CE2 and OE options
The BS62LV1603 is a high performance , very low power CMOS Static
Random Access Memory organized as 2048K words by 8 bits and
operates from a range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
3.0uA at 3.0V/25
o
C and maximum access time of 55ns at 3.0V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable(CE1)
, an active HIGH chip enable (CE2) and active LOW output enable (OE)
and three-state output drivers.
The BS62LV1603 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV1603 is available in 48B BGA and 44L TSOP2 packages.
GENERAL DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc
. reserves the right to modify document contents without notice.
Address
Input
Buffer
Row
Decoder
Memory Array
4096 X 4096
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Output
Buffer
Address Input Buffer
Data
Input
Buffer
Control
Gnd
Vdd
OE
WE
CE2
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
A20
A13
A17
A15
A18
A16
A14
A12
A7
A6
A5
A4
8
8
8
8
18
512
4096
4096
24
A11A9 A8 A3 A2 A1 A0A10 A19
BS62LV1603
POWER DISSIPATION
STANDBY
( I
CCSB1
, Max )
SPEED
( ns )
Operating
( I
CC
, Max )
Vcc=3V
55ns
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=3V
Vcc=3V
70ns
PKG TYPE
BS62LV1603EC
BS62LV1603FC
BS62LV1603EI
BS62LV1603FI
TSOP2-44
BGA-48-0912
TSOP2-44
BGA-48-0912
+0
O
C to +70
O
C
2.7V ~ 3.6V
55 / 70
10uA
45mA
36mA
-40
O
C to +85
O
C
2.7V ~ 3.6V
55 / 70
20uA
46mA
37mA
A4
A3
A2
A1
A0
CE1
NC
NC
DQ0
DQ1
VCC
GND
DQ2
DQ3
NC
A20
WE
A19
A18
A17
A16
A15
A5
A6
A7
OE
CE2
A8
NC
NC
DQ7
DQ6
GND
VCC
DQ5
DQ4
NC
NC
A9
A10
A11
A12
A13
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
BS62LV1603EC
BS62LV1603EI
CE1
BSI
55ns : 3.0~3.6V
70ns : 2.7~3.6V
G
H
F
E
D
C
B
A
1
2
3
4
5
6
A9
A8
A11
A10
A18
A19
A12
A14
A13
A15
WE
NC
A20
NC
NC
NC
D3
D7
VSS
A17
A16
A7
VCC
VSS
VCC
D2
D1
D6
D5
VCC
A5
OE
A3
A0
A6
A4
A1
A2
CE2
NC
NC
NC
NC
NC
CE1
D4
NC
D0
48-ball BGA top view
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| BS62LV1603ECG55 | Very Low Power/Voltage CMOS SRAM 2M X 8 bit |
| BS62LV1603EIG55 | Very Low Power/Voltage CMOS SRAM 2M X 8 bit |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BS62LV1603FCG70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 2M X 8 bit |
| BS62LV1603FCP55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 2M X 8 bit |
| BS62LV1603FCP70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 2M X 8 bit |
| BS62LV1603FI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 2M X 8 bit |
| BS62LV1603FI-55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 2M X 8 bit |
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