參數(shù)資料
型號(hào): BS62LV1600FCP70
廠商: BRILLIANCE SEMICONDUCTOR INC
元件分類: DRAM
英文描述: Very Low Power CMOS SRAM 2M X 8 bit
中文描述: 2M X 8 STANDARD SRAM, 70 ns, PBGA48
封裝: 9 X 12 MM, ROHS COMPLIANT, BGA-48
文件頁數(shù): 1/10頁
文件大小: 219K
代理商: BS62LV1600FCP70
Very Low Power CMOS SRAM
2M X 8 bit
Pb-Free and Green package materials are compliant to RoHS
BS62LV1600
R0201-BS62LV1600
Revision
Jan.
2.2
2006
1
n
FEATURES
Wide V
CC
operation voltage : 2.4V ~ 5.5V
Very low power consumption :
V
CC
= 3.0V
Operation current : 46mA (Max.) at 55ns
Standby current :
V
CC
= 5.0V
Operation current : 115mA (Max.) at 55ns
Standby current :
High speed access time :
-55
55ns (Max.) at V
CC
: 3.0~5.5V
-70
70ns (Max.) at V
CC
: 2.7~5.5V
Automatic power down when chip is deselected
Easy expansion with CE1, CE2 and OE options
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
2mA (Max.) at 1MHz
1.5uA (Typ.) at 25
O
C
10mA (Max.) at 1MHz
6.0uA (Typ.) at 25
O
C
n
DESCRIPTION
The BS62LV1600 is a high performance, very low power CMOS
Static Random Access Memory organized as 2048K by 8 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 1.5uA at 3.0V/25
O
C and maximum access time of 55ns at
3.0V/85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2), and active LOW output
enable (OE) and three-state output drivers.
The BS62LV1600 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS62LV1600 is available in JEDEC standard 44-pin TSOP II
and 48-ball BGA package.
n
POWER CONSUMPTION
POWER DISSIPATION
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
V
CC
=5.0V
10MHz
V
CC
=3.0V
10MHz
PRODUCT
FAMILY
OPERATING
TEMPERATURE
V
CC
=5.0V V
CC
=3.0V
1MHz
f
Max.
1MHz
f
Max.
PKG TYPE
BS62LV1600EC
TSOP II-44
BS62LV1600FC
Commercial
+0
C to +70
O
C
50uA
8.0uA
9mA
48mA
113mA
1.5mA
19mA
45mA
BGA-48-0912
BS62LV1600EI
TSOP II-44
BS62LV1600FI
Industrial
-40
O
C to +85
O
C
100uA
16uA
10mA
50mA
115mA
2mA
20mA
46mA
BGA-48-0912
n
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
n
BLOCK DIAGRAM
A20
A13
A17
A15
A18
A16
A14
A12
A7
A6
A5
A4
A4
A3
A2
A1
A0
CE1
NC
DQ0
DQ1
VCC
VSS
DQ3
NC
A20
WE
A18
A16
A15
1
2
3
4
5
6
7
8
9
10
11
12
14
15
16
17
19
21
22
BS62LV1600EC
BS62LV1600EI
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
CE2
NC
DQ7
DQ6
VSS
VCC
DQ4
NC
NC
A9
A11
A13
A14
G
H
F
E
D
C
B
A
1
2
3
4
5
6
A9
A11
A10
A19
A12
A14
A13
A15
WE
NC
NC
NC
DQ7
A17
A16
A7
VSS
VCC
DQ2
DQ1
DQ6
DQ5
NC
A5
OE
A3
A0
A6
A4
A1
A2
CE2
NC
NC
NC
CE1
DQ4
NC
48-ball BGA top view
NC
NC
DQ0
VSS
VCC
DQ3
NC
A18
A20
A8
Address
Input
Buffer
Row
Decoder
Memory Array
4096 x 4096
Column I/O
Write Driver
Sense Amp
Column Decoder
Address Input Buffer
A8
A2 A1 A0 A10
Data
Input
Buffer
Control
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
8
8
8
8
9
512
4096
4096
12
A9
A11
Data
Output
Buffer
A3
CE1
CE2
WE
OE
V
CC
V
SS
A19
相關(guān)PDF資料
PDF描述
BS62LV1600FI55 Very Low Power CMOS SRAM 2M X 8 bit
BS62LV1600FI70 Very Low Power CMOS SRAM 2M X 8 bit
BS62LV1600FIG55 Very Low Power CMOS SRAM 2M X 8 bit
BS62LV1600FIG70 Very Low Power CMOS SRAM 2M X 8 bit
BS62LV1600FIP55 Very Low Power CMOS SRAM 2M X 8 bit
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BS62LV1600FI 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 2M X 8 bit
BS62LV1600FI55 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 2M X 8 bit
BS62LV1600FI70 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 2M X 8 bit
BS62LV1600FIG55 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 2M X 8 bit
BS62LV1600FIG70 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 2M X 8 bit