參數(shù)資料
型號(hào)： BS62LV1027STCG55
廠商： BRILLIANCE SEMICONDUCTOR INC
元件分類(lèi)： DRAM
英文描述： Very Low Power/Voltage CMOS SRAM
中文描述： 128K X 8 STANDARD SRAM, 55 ns, PDSO32
封裝： 8 X 13.40 MM, GREEN, STSOP-32
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 427K
代理商： BS62LV1027STCG55
R0201-BS62LV1027
Revision 2.1
Jan. 2004
1
POWER DISSIPATION
STANDBY
(I
CCSB1
, Max)
Vcc=5.0V
Vcc=3.0V
SPEED
(ns)
55ns : 3.0~5.5V
70ns : 2.7~5.5V
(I
CC
, Max)
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
PKG TYPE
BS62LV1027SC
BS62LV1027TC
BS62LV1027STC
BS62LV1027PC
BS62LV1027JC
BS62LV1027DC
BS62LV1027SI
BS62LV1027TI
BS62LV1027STI
BS62LV1027PI
BS62LV1027JI
BS62LV1027DI
PIN CONFIGURATIONS
SOP-32
TSOP-32
STSOP-32
PDIP-32
SOJ-32
DICE
SOP-32
TSOP-32
STSOP-32
PDIP-32
SOJ-32
DICE
+0
O
C to +70
O
C
2.4V ~ 5.5V
55/70
8.0uA
14mA
-40
O
C to +85
O
C
2.4V ~ 5.5V
55/70
20uA
15mA
Very Low Power/Voltage CMOS SRAM
128K X 8 bit
Wide Vcc operation voltage : 2.4V ~ 5.5V
Very low power consumption :
Vcc = 3.0V C-grade : 17mA (@55ns) operating current
I- grade : 18mA (@55ns) operating current
C-grade : 14mA (@70ns) operating current
I- grade : 15mA (@70ns) operating current
0.1uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade : 46mA (55ns) operating current
I- grade : 47mA (55ns) operating current
C-grade : 38mA (70ns) operating current
I- grade : 39mA (70ns) operating current
0.6uA (Typ.) CMOS standby current
High speed access time :
-55 55ns
-70 70ns
Automatic power down when chip is deselected
The BS62LV1027 is a high performance, very low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.1uA at 3V/25
o
C and maximum access time of 55ns at 3V/85
o
C.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62LV1027 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV1027 is available in DICE form , JEDEC standard 32 pin
450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP,8mm x13.4
mm STSOP and 8mmx20mm TSOP.
DESCRIPTION
FEATURES
BLOCK DIAGRAM
PRODUCT FAMILY
Brilliance Semiconductor, Inc
.
reserves the right to modify document contents without notice.
BS62LV1027
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
BS62LV1027SC
BS62LV1027SI
BS62LV1027PC
BS62LV1027PI
BS62LV1027JC
BS62LV1027JI
A7
A12
Address
Input
Buffer
Row
Decoder
Memory Array
1024 x 1024
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Output
Buffer
Address Input Buffer
A3 A2 A1 A0 A10
Data
Input
Buffer
Control
Gnd
Vdd
OE
WE
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
A14
A16
A15
A9
A11
A8
A13
A6
8
8
8
8
14
128
1024
1024
20
A4
A5
CE2
BSI
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
BS62LV1027TC
BS62LV1027STC
BS62LV1027TI
BS62LV1027STI
Easy expansion with CE2, CE1, and OE options
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
1.3uA
2.5uA
38mA
39mA
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Operating
Vcc=3V
Vcc=5V
相關(guān)PDF資料
PDF描述
BS62LV1027SIG55 Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0004-2 00; No. of Positions: 5; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.25; Terminal Pitch (mm): 1.25; Current Rating(Amps)(Max.): 1; Operating Temperature Range (degrees C): -35 to 85; General Description: Housing; Single row; Crimping
BS62LV1027SIG70 Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0005-5 00; No. of Positions: 6; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.25; Terminal Pitch (mm): 1.25; Current Rating(Amps)(Max.): 1; Operating Temperature Range (degrees C): -35 to 85; General Description: Housing; Single row; Crimping
BS62LV1027DC-55 Very Low Power/Voltage CMOS SRAM
BS62LV1027DC-70 Very Low Power/Voltage CMOS SRAM
BS62LV1027DCG55 Very Low Power/Voltage CMOS SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BS62LV1027STCG70 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM
BS62LV1027STCP55 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 128K X 8 bit
BS62LV1027STCP70 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 128K X 8 bit
BS62LV1027STCP-70 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Very Low Power/Voltage CMOS SRAM
BS62LV1027STI 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM
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