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參數(shù)資料
| 型號(hào)： | BS616UV2019DC85 |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power CMOS SRAM 128K X 16 bit |
| 中文描述： | 超低功耗CMOS SRAM 128K的× 16位 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 183K |
| 代理商： | BS616UV2019DC85 |
Ultra Low Power CMOS SRAM
128K X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BS616UV2019
R0201-BS616UV2019
Revision
May.
1.3
2006
1
n
FEATURES
Wide V
CC
low operation voltage :
Ultra low power consumption :
V
CC
= 2.0V
V
CC
= 3.0V
High speed access time :
-85
-10
Automatic power down when chip is deselected
Easy expansion with CE and OE options
I/O Configuration x8/x16 selectable by LB and UB pin.
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
n
POWER CONSUMPTION
C-grade : 1.8V ~ 3.6V
I-grade : 1.9V ~ 3.6V
Operation current : 10mA (Max.) at 85ns
1mA (Max.) at 1MHz
Standby current :
0.2uA (Typ.) at 25
O
C
Operation current : 13mA (Max.) at 85ns
2mA (Max.) at 1MHz
Standby current :
0.3uA (Typ.) at 25
O
C
85ns (Max.)
100ns (Max.)
n
DESCRIPTION
The BS616UV2019 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 131,072 by 16 bits and
operates form a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.2uA at 2.0V/25
O
C and maximum access time of 85ns at
85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616UV2019 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616UV2019 is available in DICE form, JEDEC standard
48-pin TSOP Type I package and 48-ball BGA package.
POWER DISSIPATION
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
V
CC
=3.0V
V
CC
=2.0V
PRODUCT
FAMILY
OPERATING
TEMPERATURE
V
CC
=3.0V
V
CC
=2.0V
1MHz
f
Max.
1MHz
f
Max.
PKG TYPE
BS616UV2019DC
BS616UV2019AC
BS616UV2019TC
BS616UV2019AI
BS616UV2019TI
DICE
BGA-48-0608
TSOP I-48
BGA-48-0608
TSOP I-48
Commercial
+0
O
C to +70
O
C
3.0uA
2.0uA
1.5mA
11mA
0.8mA
8mA
Industrial
-40
O
C to +85
O
C
5.0uA
3.0uA
2.0mA
13mA
1.0mA
10mA
n
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
n
BLOCK DIAGRAM
G
H
F
E
D
C
B
A
1
2
3
4
5
6
A9
A11
A10
NC
A12
A14
A13
A15
WE
D13
D5
D7
D6
NC
A16
A7
VSS
VCC
D12
D11
D4
D3
NC
A5
OE
A3
A0
A6
A4
A1
A2
NC
UB
D10
D1
CE
D2
D0
48-ball BGA top view
LB
D8
D9
VSS
VCC
D14
D15
NC
NC
A8
Address
Input
Buffer
Row
Decoder
Memory Array
1024 x 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Address Input Buffer
A0
A2 A3 A4
Data
Buffer
Control
DQ0
.
.
.
.
.
.
DQ15
A6
A7
A8
A9
A10
A11
A15
A14
A13
A12
16
16
16
16
7
128
2048
1024
10
A16
Data
Output
Buffer
A1
CE2,CE
WE
OE
UB
LB
V
CC
V
SS
A5
.
.
.
.
.
.
A15
A14
A13
A12
A11
A9
A8
NC
NC
WE
NC
UB
LB
NC
NC
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
14
15
16
17
19
21
22
23
24
BS616UV2019TC
BS616UV2019TI
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
GND
DQ15
DQ7
DQ6
DQ5
DQ12
DQ4
VCC
DQ3
DQ10
DQ2
DQ9
DQ8
OE
GND
CE
A0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BS616UV2019DI10 | Ultra Low Power CMOS SRAM 128K X 16 bit |
| BS616UV2019DI85 | Ultra Low Power CMOS SRAM 128K X 16 bit |
| BS616UV2019TC10 | Ultra Low Power CMOS SRAM 128K X 16 bit |
| BS616UV2019TI10 | Ultra Low Power CMOS SRAM 128K X 16 bit |
| BS616UV2019TI85 | Ultra Low Power CMOS SRAM 128K X 16 bit |
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| BS62LV1023 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62LV1023DC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62LV1023DI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
| BS62LV1023JC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
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