參數(shù)資料
型號(hào)： BS616UV1010ECP10
廠商： BRILLIANCE SEMICONDUCTOR, INC.
英文描述： Ultra Low Power CMOS SRAM 64K X 16 bit
中文描述： 超低功耗CMOS SRAM 64K的× 16位
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 218K
代理商： BS616UV1010ECP10
Ultra Low Power CMOS SRAM
64K X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BS616UV1010
R0201-BS616UV1010
Revision
May.
2.6
2006
1
n
FEATURES
Wide V
CC
low operation voltage : 1.9V ~ 3.6V
Ultra low power consumption :
V
CC
= 2.0V
Operation current : 15mA (Max.) at 100ns
Standby current :
V
CC
= 3.0V
Operation current : 20mA (Max.) at 100ns
Standby current :
High speed access time :
-10
100ns (Max.)
Automatic power down when chip is deselected
Easy expansion with CE and OE options
I/O Configuration x8/x16 selectable by LB and UB pin.
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
1.0mA (Max.) at 1MHz
0.01uA (Typ.) at 25
O
C
2.0mA (Max.) at 1MHz
0.02uA (Typ.) at 25
O
C
n
DESCRIPTION
The BS616UV1010 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 65,536 by 16 bits and
operates form a wide range of 1.9V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.01uA at 2.0V/25
O
C and maximum access time of 100ns
at 2.0V/85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616UV1010 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616UV1010 is available in DICE form, JEDEC standard
44-pin TSOP II and 48-ball BGA package.
n
POWER CONSUMPTION
POWER DISSIPATION
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
V
CC
=3.0V
V
CC
=2.0V
PRODUCT
FAMILY
OPERATING
TEMPERATURE
V
CC
=3.0V
V
CC
=2.0V
1MHz
f
Max.
1MHz
f
Max.
PKG TYPE
BS616UV1010DC
DICE
BS616UV1010EC
BGA-48-0608
TSOP II-44
Commercial
+0
C to +70
O
C
1.0uA
0.5uA
1.5mA
18mA
0.8mA
13mA
BS616UV1010AI
BS616UV1010EI
BGA-48-0608
TSOP II-44
Industrial
-40
O
C to +85
O
C
1.5uA
1.0uA
2.0mA
20mA
1.0mA
15mA
n
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
n
BLOCK DIAGRAM
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
VCC
VSS
DQ4
DQ5
WE
A15
A14
A13
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
BS616UV1010EC
BS616UV1010EI
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
OE
LB
DQ15
DQ14
DQ13
VSS
VCC
DQ11
DQ10
DQ8
A8
A9
A10
A11
G
H
F
E
D
C
B
A
1
2
3
4
5
6
A9
A11
A10
NC
A12
A14
A13
A15
WE
D13
D5
D7
D6
NC
NC
A7
VSS
VCC
D12
D11
D4
D3
NC
A5
OE
A3
A0
A6
A4
A1
A2
NC
UB
D10
D1
CE
D2
D0
48-ball BGA top view
LB
D8
D9
VSS
VCC
D14
D15
NC
NC
A8
Address
Input
Buffer
Row
Decoder
Memory Array
512 x 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Address Input Buffer
A9
A2
A1
A0
Data
Input
Control
DQ0
.
.
.
.
.
.
DQ15
A8
A13
A15
A14
A12
A7
A6
A5
A4
16
16
16
16
7
128
2048
512
9
A11
Data
Output
Buffer
A3
CE
WE
OE
UB
LB
V
CC
V
SS
A10
.
.
.
.
.
.
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