參數(shù)資料
型號(hào)： BS616LV8017FI70
廠商： BRILLIANCE SEMICONDUCTOR, INC.
英文描述： Very Low Power CMOS SRAM 512K X 16 bit
中文描述： 非常低功耗CMOS SRAM為512k × 16位
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 220K
代理商： BS616LV8017FI70
Very Low Power CMOS SRAM
512K X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BS616LV8017
R0201-BS616LV8017
Revision
May.
2.3
2006
1
n
FEATURES
Wide V
CC
operation voltage : 2.4V ~ 5.5V
Very low power consumption :
V
CC
= 3.0V
Operation current : 31mA (Max.) at 55ns
Standby current :
V
CC
= 5.0V
Operation current : 76mA (Max.) at 55ns
Standby current :
High speed access time :
-55
55ns(Max.) at V
CC
=3.0~5.5V
-70
70ns(Max.) at V
CC
=2.7~5.5V
Automatic power down when chip is deselected
Easy expansion with CE and OE options
I/O Configuration x8/x16 selectable by LB and UB pin.
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
n
POWER CONSUMPTION
2mA (Max.) at 1MHz
0.8uA (Typ.) at 25
O
C
10mA (Max.) at 1MHz
3.5uA (Typ.) at 25
O
C
n
DESCRIPTION
The BS616LV8017 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 by 16 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.8uA at 3.0V/25
O
C and maximum access time of 55ns at
3.0V/85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616LV8017 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV8017 is available in DICE form, JEDEC standard
44-pin TSOP II and 48-ball BGA package.
POWER DISSIPATION
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
V
CC
=5.0V
10MHz
V
CC
=3.0V
10MHz
PRODUCT
FAMILY
OPERATING
TEMPERATURE
V
CC
=5.0V
V
CC
=3.0V
1MHz
f
Max.
1MHz
f
Max.
PKG TYPE
BS616LV8017DC
DICE
BS616LV8017EC
BS616LV8017FI
TSOP II-44
BGA-48-0912
Commercial
+0
O
C to +70
O
C
25uA
4.0uA
9mA
39mA
75mA
1.5mA
19mA
30mA
BS616LV8017EI
BS616LV8017FI
TSOP II-44
BGA-48-0912
Industrial
-40
O
C to +85
O
C
50uA
8.0uA
10mA
40mA
76mA
2mA
20mA
31mA
n
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
n
BLOCK DIAGRAM
A4
A3
A2
A1
A0
CE
DQ1
DQ2
DQ3
VSS
DQ4
DQ5
DQ6
WE
A18
A16
A15
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
BS616LV8017EC
BS616LV8017EI
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
LB
DQ14
DQ13
DQ12
VSS
DQ11
DQ10
DQ9
DQ8
A9
A11
A12
A13
G
H
F
E
D
C
B
A
1
2
3
4
5
6
A9
A11
A10
NC
A12
A14
A13
A15
WE
D13
D5
D7
D6
A17
A16
A7
VSS
VCC
D12
D11
D4
D3
NC
A5
OE
A3
A0
A6
A4
A1
A2
NC
UB
D10
D1
CE
D2
D0
48-ball BGA top view
LB
D8
D9
VSS
VCC
D14
D15
A18
NC
A8
Address
Input
Buffer
Row
Decoder
Memory Array
1024 x 8192
Column I/O
Write Driver
Sense Amp
Column Decoder
Address Input Buffer
A15
A17
A0 A1
Data
Input
Control
DQ0
.
.
.
.
.
.
DQ15
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
16
16
16
16
9
512
8192
1024
10
A14
Data
Output
Buffer
A16
CE
WE
OE
UB
LB
V
CC
V
SS
A3
.
.
.
.
.
.
A18
A2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BS616LV8017FI-70 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 512K X 16 bit
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BS616LV8017FIP55 制造商:Brilliance Semiconductor Inc 功能描述:SRAM 8M 512KX16 2.45.5V SMD 616
BS616LV8017FIP70 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 512K X 16 bit
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