參數(shù)資料
型號： BS170L
廠商： CALOGIC LLC
元件分類： 功率晶體管
英文描述： N-Channel Enhancement-Mode MOS Transistor
中文描述： 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝： PLASTIC, TO-226AA, 3 PIN
文件頁數(shù)： 2/2頁
文件大小： 25K
代理商： BS170L
2N7000 /BS170L
C ORPORATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
V
DS
V
GS
PARAMETERS
LIMITS
60
±
40
0.2
0.13
0.5
0.4
0.16
-55 to 150
-55 to 150
300
UNITS
TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
V
I
D
Continuous Drain Current
A
T
A
= 25
o
C
T
A
= 100
o
C
I
DM
Pulsed Drain Current
1
P
D
Power Dissipation
1
W
T
A
= 25
o
C
T
A
= 100
o
C
T
J
T
stg
T
L
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
o
C
THERMAL RESISTANCE RATINGS
SYMBOL
R
thJA
THERMAL RESISTANCE
Junction-to-Ambient
LIMITS
312.5
UNITS
K/W
NOTE:
1. Pulse width limited by maximum junction temperature.
SPECIFICATIONS
1
SYMBOL
STATIC
V
(BR)DSS
V
GS(th)
I
GSS
PARAMETER
MIN
TYP
2
MAX
UNIT
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
60
0.8
70
1.9
V
I
D
= 10
μ
A, V
GS
= 0V
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±
15V, V
DS
= 0V
V
DS
= 48V, V
GS
= 0V
3
±
10
1
1000
nA
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 125
o
C
I
D(ON)
On-State Drain Current
3
75
210
4.8
2.5
4.4
0.36
1.25
2.2
170
500
mA
V
DS
= 10V, V
GS
= 4.5V
4
V
GS
= 4.5V, I
D
= 75mA
V
GS
= 10V, I
D
= 0.5A
r
DS(ON)
Drain-Source On-Resistance
3
5.3
5
9
0.4
2.5
4.5
T
C
= 125
o
C
V
DS(ON)
Drain-Source On-Voltage
3
V
4
V
GS
= 4.5V, I
D
= 75mA
V
GS
= 10V, I
D
= 0.5A
T
C
= 125
o
C
4
g
FS
g
OS
DYNAMIC
C
iss
C
oss
C
rss
SWITCHING
Forward Transconductance
3
Common Source Output Conductance
3, 4
100
mS
μ
S
V
DS
= 10V, I
D
= 0.2A
V
DS
= 5V, I
D
= 50mA
Input Capacitance
Output Capacitance
4
Reverse Transfer Capacitance
16
11
2
60
25
5
pF
V
DS
= 25V, V
GS
= 0V, f = 1MHz
t
ON
Turn-On Time
7
10
nS
V
DD
= 15V, R
L
= 25
, I
D
= 0.5A
V
GEN
= 10V, R
G
= 25
(Switching time is essentially
independent of operating temperature)
t
OFF
Turn-Off Time
7
10
NOTES: 1. T
A
= 25
o
C unless otherwise specified.
2. For design aid only, not subject to production testing.
3. Pulse test; PW =
≤
300
μ
S, duty cycle
≤
3%.
4. This parameter not registered with JEDEC.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BS170P 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BS170P 制造商:Diodes Incorporated 功能描述:MOSFET N E-LINE
BS170PSTOA 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BS170PSTOB 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BS170PSTZ 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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